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參數(shù)資料
| 型號： | SI3012-KS |
| 廠商： | Silicon Laboratories Inc |
| 文件頁數(shù)： | 10/64頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC LINE-SIDE DAA 16SOIC |
| 標(biāo)準(zhǔn)包裝： | 48 |
| 系列： | ISOcap™ |
| 數(shù)據(jù)格式： | V.90 |
| 電源電壓： | 3.3 V ~ 5 V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 16-SOIC N |
| 包裝： | 管件 |
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Si3038
18
Rev. 2.01
Table 17. FCC Component Values—Si3036 Chipset
Component1
Value
Supplier(s)
C1,C42
150 pF, 3 kV, X7R,±20%
Novacap, Venkel, Johanson, Murata, Panasonic
C2
Not Installed
C3
0.22 F, 16 V, X7R, ±20%
C5
1 F, 16 V, Elec/Tant, ±20%
C6,C10,C16
0.1 F, 16 V, X7R, ±20%
C9,C28,C29
15 nF, 250 V, X7R, ±20%
Novacap, Johanson, Murata, Panasonic
C11
39 nF, 16 V, X7R, ±20%
C123
2.7 nF, 16 V, X7R, ±20%
C7,C8,C13,C14,C18,
C19,C20,C22
Not Installed
C233
0.1
F, 16 V, Elec/Tant/X7R, ±20%
C24,C25,C31,C322,4
1000 pF, 3 kV, X7R, ±10%
Novacap, Venkel, Johanson, Murata, Panasonic
C305
Not Installed
C34,C356
33 pF, 16 V, NPO, ±5%
Novacap, Venkel, Johanson, Murata, Panasonic
D1,D27
Dual Diode, 300 V, 225 mA
Central Semiconductor
D3,D4
BAV99 Dual Diode, 70 V, 350 mW
Diodes Inc., OnSemiconductor, Fairchild
FB1,FB2
Ferrite Bead
Murata
L1,L2
0
, 1/10 W
Q1,Q3
A42, NPN, 300 V
OnSemiconductor, Fairchild
Q2
A92, PNP, 300 V
OnSemiconductor, Fairchild
Q4
Not Installed
RV1
Sidactor, 275 V, 100 A
Teccor, ST Microelectronics, Microsemi, TI
RV2
MOV, 240 V
Panasonic
R1
51
, 1/2 W, ±5%
R2
15
, 1/4 W, ±5%
R3
Not Installed
R43,R18,R213
301
, 1/10 W, ±1%
R5,R6
36 k
, 1/10 W, ±5%
R7,R8,R113,R12,R13,R15
R16,R17,R19,R24
Not Installed
R9,R10
2 k
, 1/10 W, ±5%
R22,R23
20 k
, 1/10 W, ±5%
R27,R28
10
, 1/10 W, ±5%
R29
0
, 1/10 W
R30
Not Installed
U1
Si3024
Silicon Labs
U2
Si3012
Silicon Labs
Y15
24.576 MHz, 18 pF, 50 ppm
Z1
Zener Diode, 18 V
Vishay, OnSemiconductor, Rohm
Z4,Z5
Zener Diode, 5.6 V, 1/2 W
Diodes Inc., OnSemiconductor, Fairchild
Notes:
1. The following reference designators were intentionally omitted: C15, C17, C21, C26, C27, C31–C33, R14, and R20.
2. Y2 class capacitors may also be used to achieve surge performance of 5 kV or better.
3. If JATE support is not required, R21, C12, and C23 may be removed and the following modifications implemented: R21 should be
replaced with a 0
resistor or shorted, and R4 should be changed to a 604 , 1/4 W, ±1%.
4. Alternate population option is C24, C25 (2200 pF, 3 kV, X7R, ±10% and C31, C32 not installed).
5. Install only if needed for improved radiated emissions performance (10 pF, 16 V, NPO, ±10%).
6. Y1, C34, and C35 should be installed if the Si3024 is configured as a primary device.
7. Several diode bridge configurations are acceptable (suppliers include General Semi., Diodes Inc.).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3012-KSR | 制造商:Silicon Laboratories Inc 功能描述: |
| SI-3012KS-TL | 制造商:Sanken Electric Co Ltd 功能描述:IC REG LDO ADJ 1A 8SOIC |
| SI3012-KT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GLOBAL MC 97 SILICON DAA |
| SI-3012LU | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Surface-Mount, Low Current Consumption, Low Dropout Voltage Dropper Type |
| SI-3012LU-TL | 制造商:Sanken Electric Co Ltd 功能描述:IC REG LDO ADJ 0.25A SOT89-5 |
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