參數(shù)資料
型號： S29GL128M90FAIR20
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MOSFET, Switching; VDSS (V): -30; ID (A): -14; Pch : 2.5; RDS (ON) typ. (ohm) @10V: 0.009; RDS (ON) typ. (ohm) @4V[4.5V]: [0.015]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3500; toff (µs) typ: 0.31; Package: SOP-8
中文描述： 8M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝： 13 X 11 MM, FORTIFIED, BGA-64
文件頁數(shù)： 149/160頁
文件大小： 2142K
代理商： S29GL128M90FAIR20
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
149
P r e l i m i n a r y
Physical Dimensions
TS056/TSR056—56-Pin Standard/Reverse Thin Small Outline Package (TSOP)
NOTES:
1
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
(DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982.)
2
PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP).
3
PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN), INK OR LASER MARK.
4
TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS
DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE
LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE.
5
DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE
MOLD PROTUSION IS 0.15 mm PER SIDE.
6
DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE
DAMBAR PROTUSION SHALL BE 0.08 mm TOTAL IN EXCESS OF b
DIMENSION AT MAX MATERIAL CONDITION. MINIMUM SPACE BETWEEN
PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 mm.
7
THESE DIMESIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN
0.10 mm AND 0.25 mm FROM THE LEAD TIP.
8.
LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
SEATING PLANE.
9
DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
3160\38.10A
MO-142 (B) EC
NOM.
---
---
1.00
0.95
0.17
0.17
0.10
0.10
TS/TSR 56
1.20
0.15
1.05
0.23
0.27
0.16
0.21
MAX.
---
0.05
MIN.
0.20
0.22
---
---
20.00
18.40
20.20
18.50
19.90
18.30
14.00
14.10
13.90
0.60
3
---
56
0.70
5
0.20
0.50
0
0.08
0.50 BASIC
E
e
L
R
N
b1
b
JEDEC
SYMBOL
A
A1
PACKAGE
A2
D1
D
c1
c
O
相關(guān)PDF資料
PDF描述
S29GL128M90FAIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FAIR23 MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 2.0/3.0; RDS (ON) typ. (ohm) @10V: 0.06; RDS (ON) typ. (ohm) @4V[4.5V]: [0.09]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1350; toff (µs) typ: 0.055; Package: SOP-8
S29GL128M90FAIR80 MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 2.0/3.0; RDS (ON) typ. (ohm) @10V: 0.06; RDS (ON) typ. (ohm) @4V[4.5V]: [0.09]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1350; toff (µs) typ: 0.055; Package: SOP-8
S29GL128M90FAIR82 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FAIR83 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128M90TAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128M90TAIR13 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 90NS 56TSOP - Tape and Reel
S29GL128M90TFIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128N10FFI010 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 128MB SMD 29LV128
S29GL128N10FFI020 制造商:Spansion 功能描述:Flash - NOR IC
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