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參數(shù)資料
| 型號(hào)： | RJ80530LZ800512 |
| 元件分類： | 微處理器 |
| 英文描述： | Microprocessor |
| 中文描述： | 微處理器 |
| 文件頁數(shù)： | 71/89頁 |
| 文件大小： | 1672K |
| 代理商： | RJ80530LZ800512 |
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Mobile Intel
Pentium
III Processor-M Datasheet
298340-002
Datasheet
71
P
DSLP
Deep Sleep power at
0.95V
1.05V
1.10V
1.15V
1.40V
0.7
1.3
1.2
2.0
4.8
W
At 35°C, Note 2
Notes 2, 4
Notes 2, 4
P
DPRSLP
Deeper Sleep power
at 0.85V
0.62
W
At 35°C, Note 2
P
DPRSLPULV
Deeper Sleep power
at 0.85V
0.47
W
At 35°C, Notes 2, 4
T
J
Junction Temperature
0
100
°C
Note 3
NOTES:
1.
TDP is defined as the worst case power dissipated by the processor while executing publicly available software
under normal operating conditions at nominal voltages that meet the load line specifications. The TDP
number
shown is a specification based on Icc(maximum) and indirectly tested by Icc(maximum) testing. TDP definition
is synonymous with the Thermal Design Power (typical) specification referred to in previous Intel datasheets.
The Intel TDP specification is a recommended design point and is not representative of the absolute maximum
power the processor may dissipate under worst case conditions.
2.
Not 100% tested. These power specifications are determined by characterization of the processor currents at
higher temperatures and extrapolating the values for the temperature indicated.
3.
T
J
is measured with the on-die thermal diode.
4.
This specification applies only to the Ultra Low Voltage Mobile Intel Pentium III Processor-M.
6.1
Thermal Diode
The Mobile Intel Pentium
III
Processor-M has an on-die thermal diode that can be used to monitor the
die temperature(T
J
). A thermal sensor located on the motherboard, or a stand-alone measurement kit,
may monitor the die temperature of the processor for thermal management or instrumentation purposes.
Table 42 and Table 43 provide the diode interface and specifications.
Note:
The reading of the thermal sensor connected to the thermal diode will not necessarily reflect the
temperature of the hottest location on the die. This is due to inaccuracies in the thermal sensor, on-die
temperature gradients between the location of the thermal diode and the hottest location on the die, and
time based variations in the die temperature measurement. Time based variations can occur when the
sampling rate of the thermal diode (by the thermal sensor) is slower than the rate at which the T
J
temperature can change.
Table 42. Thermal Diode Interface
Signal Name
Pin/Ball Number
Signal Description
THERMDA
AF13
Thermal diode anode
THERMDC
AF14
Thermal diode cathode
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