參數(shù)資料
型號(hào): PH28F128W18BD60A
廠商: INTEL CORP
元件分類: PROM
英文描述: 8M X 16 FLASH 1.8V PROM, 60 ns, PBGA56
封裝: 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-56
文件頁(yè)數(shù): 89/106頁(yè)
文件大?。?/td> 1496K
代理商: PH28F128W18BD60A
Intel
Wireless Flash Memory (W18)
Datasheet
Intel Wireless Flash Memory (W18)
07-Dec-2005
Order Number: 290701, Revision: 015
83
13.3
VPP Protection
The Intel
Wireless Flash Memory (W18) provides in-system program and erase at V
PP1. For
factory programming, it also includes a low-cost, backward-compatible 12 V programming
feature.(Section 11.2, “Factory Programming” on page 66) The EFP feature can also be used to
greatly improve factory program performance as explained in Section 11.3, “Enhanced Factory
In addition to the flexible block locking, holding the VPP programming voltage low can provide
absolute hardware write protection of all flash-device blocks. If VPP is below VPPLK, program or
erase operations result in an error displayed in SR[3]. (See Figure 35.)
Note:
If the VCC supply can sink adequate current, you can use an appropriately valued resistor.
Figure 34.
Protection Register Locking
0x84
0x88
0x85
0x81
0x80
PR Lock Register 0
User-Programmable
Intel Factory-Programmed
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
Figure 35.
Examples of VPP Power Supply Configurations
12 V fast programming
Absolute write protection with V
PP
V
PPLK
System supply
(Note 1)
VCC
VPP
12 V supply
Low voltage and 12 V fast programming
System supply
12 V supply
Low-voltage programming
Absolute write protection via logic signal
System supply
Prot# (logic signal)
Low-voltage programming
System supply
≤ 10K Ω
VCC
VPP
VCC
VPP
VCC
VPP
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