參數(shù)資料
型號(hào): PH28F128W18BD60A
廠商: INTEL CORP
元件分類: PROM
英文描述: 8M X 16 FLASH 1.8V PROM, 60 ns, PBGA56
封裝: 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-56
文件頁數(shù): 87/106頁
文件大小: 1496K
代理商: PH28F128W18BD60A
Intel
Wireless Flash Memory (W18)
Datasheet
Intel Wireless Flash Memory (W18)
07-Dec-2005
Order Number: 290701, Revision: 015
81
Note:
The individual bits of the user segment of the protection register are OTP, not the register in total.
The user may program each OTP bit individually, one at a time, if desired. After the protection
register is locked, however, the entire user segment is locked and no more user bits can be
programmed.
The protection register shares some of the same internal flash resources as the parameter partition.
Therefore, RWW is only allowed between the protection register and main partitions. Table 26
describes the operations allowed in the protection register, parameter partition, and main partition
during RWW and RWE.
13.2.1
Reading the Protection Register
Writing the Read Identifier command allows the protection register data to be read 16 bits at a time
from addresses shown in Table 21, “Device Identification Codes” on page 61. The protection
register is read from the Read Identifier command and can be read in any partition.Writing the
Read Array command returns the device to read-array mode.
13.2.2
Programing the Protection Register
The Protection Program command should be issued only at the parameter (top or bottom) partition
followed by the data to be programmed at the specified location. It programs the upper 64 bits of
the protection register 16 bits at a time. Table 21, “Device Identification Codes” on page 61 shows
page 82. Issuing a Protection Program command outside the register’s address space results in a
Status Register error (SR[4]=1).
Table 26.
Simultaneous Operations Allowed with the Protection Register
Protection
Register
Parameter
Partition
Array Data
Main
Partitions
Description
Read
See
Description
Write/Erase
While programming or erasing in a main partition, the protection register can be
read from any other partition. Reading the parameter partition data is not
allowed if the protection register is being read from addresses within the
parameter partition.
See
Description
Read
Write/Erase
While programming or erasing in a main partition, read operations are allowed
in the parameter partition. Accessing the protection registers from parameter
partition addresses is not allowed.
Read
Write/Erase
While programming or erasing in a main partition, read operations are allowed
in the parameter partition. Accessing the protection registers in a partition that
is different from the one being programmed or erased, and also different from
the parameter partition, is allowed.
Write
No Access
Allowed
Read
While programming the protection register, reads are only allowed in the other
main partitions. Access to the parameter partition is not allowed. This is
because programming of the protection register can only occur in the
parameter partition, so it will exist in status mode.
No Access
Allowed
Write/Erase
Read
While programming or erasing the parameter partition, reads of the protection
registers are not allowed in any partition. Reads in other main partitions are
supported.
相關(guān)PDF資料
PDF描述
PHC0683E1133-H IC SOCKET
PHP12NQ15T N-channel TrenchMOS transistor
PHB12NQ15T N-channel TrenchMOS transistor
PHD12NQ15T N-channel TrenchMOS transistor
PHP15N06E PowerMOS transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PH28F160C3BD70A 制造商:Micron Technology Inc 功能描述:MM#865392FLASH 28F160C3BD 70 VF-PBGA46 C
PH28F256L18B85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
PH28F256L18B85A 制造商:Micron Technology Inc 功能描述:MM#875138FLASH 28F256L18B 85 VF-PBGA79 S
PH28F256L18T85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:StrataFlash Wireless Memory
PH28F320C3TD70A 制造商:Micron Technology Inc 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 2M x 16 70ns 48-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:MM#869664FLASH 28F320C3TD 70 VF-PBGA47 E