參數(shù)資料
型號(hào): PH28F128W18BD60A
廠商: INTEL CORP
元件分類: PROM
英文描述: 8M X 16 FLASH 1.8V PROM, 60 ns, PBGA56
封裝: 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-56
文件頁數(shù): 24/106頁
文件大?。?/td> 1496K
代理商: PH28F128W18BD60A
Intel
Wireless Flash Memory (W18)
07-Dec-2005
Intel Wireless Flash Memory (W18)
Datasheet
24
Order Number: 290701, Revision: 015
5.0
Maximum Ratings and Operating Conditions
5.1
Absolute Maximum Ratings
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.
These are stress ratings only.
Notice: This datasheet contains information on products in the design phase of
development. The information here is subject to change without notice. Do not final-
ize a design with this information.
Table 7.
Absolute Maximum Ratings
Parameter
Maximum Rating
Notes
Temperature under Bias
–40 °C to +85 °C
Storage Temperature
–65 °C to +125 °C
Voltage on Any Pin (except VCC, VCCQ, VPP)
–0.5 V to +2.45 V
1,2
VPP Voltage
–0.2 V to +13.1 V
1,3,4
VCC and VCCQ Voltage
–0.2 V to +2.45 V
1,2
Output Short Circuit Current
100 mA
5
Notes:
1.
Specified voltages are with respect to VSS.
2.
During transitions, this level may undershoot to
(130 nm) –2.0 V for periods < 20 ns and overshoot to VCCQ +2.0 V for periods < 20 ns
(90 nm) –1.0 V for periods < 20 ns and overshoot to VCCQ +1.0 V for periods < 20 ns.
3.
Maximum DC voltage on VPP may overshoot to +14.6 V for periods < 20 ns.
4.
VPP program voltage is normally VPP1. VPP can be 12 V ± 0.6 V for 1000 cycles on the main
blocks and 2500 cycles on the parameter blocks during program/erase.
5.
Output shorted for no more than one second. No more than one output shorted at a time.
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