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參數(shù)資料
| 型號： | M470T2953CZ3-CE7 |
| 元件分類： | DRAM |
| 英文描述： | 128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 |
| 封裝： | ROHS COMPLIANT, SODIMM-200 |
| 文件頁數(shù)： | 6/20頁 |
| 文件大小： | 355K |
| 代理商： | M470T2953CZ3-CE7 |
Rev. 1.6 March 2007
SODIMM
DDR2 SDRAM
Page 14 of 20
(TA=0oC, VDD= 1.9V)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
800@CL=5
800@CL=6
667@CL=5
533@CL=4
400@CL=3
Unit
Notes
CE7
LE7
CF7
LF7
CE6
LE6
CD5
LD5
CCC
LCC
IDD0
1,120
TBD
1,040
TBD
1,000
800
920
760
920
760
mA
IDD1
1,200
TBD
1,200
TBD
1,120
880
1,040
840
1,040
840
mA
IDD2P
128
TBD
128
TBD
128
80
128
72
128
72
mA
IDD2Q
560
TBD
560
TBD
560
480
400
480
400
mA
IDD2N
640
TBD
640
TBD
640
560
480
560
480
mA
IDD3P-F
480
TBD
480
TBD
480
400
480
400
480
400
mA
IDD3P-S
192
TBD
192
TBD
192
128
192
128
192
128
mA
IDD3N
800
TBD
800
TBD
760
640
680
560
680
560
mA
IDD4W
1,640
TBD
1,640
TBD
1,440
1,320
1,240
1,120
1,160
1,000
mA
IDD4R
1,680
TBD
1,680
TBD
1,480
1,360
1,280
1,160
1,040
mA
IDD5
1,560
TBD
1,560
TBD
1,520
1,360
1,400
1,240
1,400
1,240
mA
IDD6
128
TBD
128
TBD
128
64
128
64
128
64
mA
IDD7
2,360
TBD
2,280
TBD
2,080
1,720
2,040
1,680
2,040
1,680
mA
11.3 M470T2953CZ3/M470T2953CZ0 : 128Mx64 1GB Module
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M470T2953CZ3-CLCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T2953CZ3-CLD5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T2953CZ3-CLE6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T2953CZ3-CLE7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T2953EZ3CE600 | 制造商:Samsung Semiconductor 功能描述: |
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