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參數(shù)資料
| 型號： | M470T2953CZ3-CE7 |
| 元件分類： | DRAM |
| 英文描述： | 128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 |
| 封裝： | ROHS COMPLIANT, SODIMM-200 |
| 文件頁數(shù)： | 11/20頁 |
| 文件大?。?/td> | 355K |
| 代理商： | M470T2953CZ3-CE7 |
Rev. 1.6 March 2007
SODIMM
DDR2 SDRAM
Page 19 of 20
The used device is 32M x16 DDR2 SDRAM, FBGA.
DDR2 SDRAM Part NO : K4T51163QC
67.60
± 0.15 mm
4.0
0
±
0.
10
20
.00
±
0.1
5
mm
30.
00
±
0.
15
mm
1
199
11.40
± 0.15 mm
47.40
± 0.15 mm
6.
0
±
0.
15
mm
SP
D
a
63.00
± 0.15 mm
16.25
± 0.15 mm
min 2.00
67.60
± 0.15 mm
30.
00
±
0.
1
5m
m
2
200
a
b
4.20
± 0.15
2.70
± 0.10
4.00
± 0.10
1.0
± 0.05
1.50
± 0.10
FRONT SIDE
4.20
± 0.15
1.80
± 0.10
4.00
± 0.10
1.0
± 0.05
2.40
± 0.10
BACK SIDE
0.60
± 0.15
0.45
± 0.03
2.
55
±
0.
1
5
0.2
0
±
0.1
5
DETAIL a
DETAIL b
14.2 32Mbx16 based 32Mx64 Module (1 Rank)
- M470T3354CZ3/M470T3354CZ0
3.8 mm
Max
1.1 mm
Max
Units : Millimeters
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M470T2953CZ3-CLCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T2953CZ3-CLD5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T2953CZ3-CLE6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T2953CZ3-CLE7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T2953EZ3CE600 | 制造商:Samsung Semiconductor 功能描述: |
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