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參數(shù)資料
| 型號(hào)： | M470T2953CZ3-CE7 |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 |
| 封裝： | ROHS COMPLIANT, SODIMM-200 |
| 文件頁(yè)數(shù)： | 5/20頁(yè) |
| 文件大?。?/td> | 355K |
| 代理商： | M470T2953CZ3-CE7 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)當(dāng)前第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)
Rev. 1.6 March 2007
SODIMM
DDR2 SDRAM
Page 13 of 20
(TA=0oC, VDD= 1.9V)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
800@CL=5
800@CL=6
667@CL=5
533@CL=4
400@CL=3
Unit
Notes
CE7
LE7
CF7
LF7
CE6
LE6
CD5
LD5
CCC
LCC
IDD0
580
TBD
560
TBD
560
480
520
460
520
460
mA
IDD1
640
TBD
640
TBD
620
540
580
520
580
520
mA
IDD2P
64
TBD
64
TBD
644064
36
6436
mA
IDD2Q
280
TBD
280
TBD
280
240
200
240
200
mA
IDD2N
320
TBD
320
TBD
320
280
240
280
240
mA
IDD3P-F
240
TBD
240
TBD
240
200
240
200
240
200
mA
IDD3P-S
96
TBD
96
TBD
966496
64
9664
mA
IDD3N
400
TBD
400
TBD
380
320
340
280
340
280
mA
IDD4W
940
TBD
940
TBD
860
800
760
700
680
620
mA
IDD4R
960
TBD
960
TBD
880
820
780
720
700
640
mA
IDD5
780
TBD
780
TBD
760
680
700
620
700
620
mA
IDD6
64
TBD
64
TBD
64
32
64
32
64
32
mA
IDD7
1,520
TBD
1,440
TBD
1,360
1,220
1,340
1,200
1,340
1,200
mA
(TA=0oC, VDD= 1.9V)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
800@CL=5
800@CL=6
667@CL=5
533@CL=4
400@CL=3
Unit
Notes
CE7
LE7
CF7
LF7
CE6
LE6
CD5
LD5
CCC
LCC
IDD0
420
TBD
400
TBD
400
340
380
340
380
340
mA
IDD1
480
TBD
480
TBD
460
400
440
400
440
400
mA
IDD2P
32
TBD
32
TBD
32203218
3218
mA
IDD2Q
140
TBD
140
TBD
140
120
100
120
100
mA
IDD2N
160
TBD
160
TBD
160
140
120
140
120
mA
IDD3P-F
120
TBD
120
TBD
120
100
120
100
120
100
mA
IDD3P-S
48
TBD
48
TBD
48324832
4832
mA
IDD3N
240
TBD
240
TBD
220
180
200
160
200
160
mA
IDD4W
780
TBD
780
TBD
700
660
620
580
540
500
mA
IDD4R
800
TBD
800
TBD
720
680
640
600
560
520
mA
IDD5
620
TBD
620
TBD
600
540
560
500
560
500
mA
IDD6
32
TBD
32
TBD
32
16
32
16
32
16
mA
IDD7
1,360
TBD
1,280
TBD
1,200
1,080
1,200
1,080
1,200
1,080
mA
11.0 Operating Current Table :
11.1 M470T6554CZ3/M470T6554CZ0 : 64Mx64 512MB Module
11.2 M470T3354CZ3/M470T3354CZ0 : 32Mx64 256MB Module
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M470T2953CZ3-CLCC | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T2953CZ3-CLD5 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T2953CZ3-CLE6 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T2953CZ3-CLE7 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
| M470T2953EZ3CE600 | 制造商:Samsung Semiconductor 功能描述: |
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