參數(shù)資料
型號(hào): IRF6644PBF
廠商: International Rectifier
英文描述: DirectFET Power MOSFET
中文描述: DirectFET功率MOSFET
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 261K
代理商: IRF6644PBF
4
www.irf.com
Fig 5.
Typical Output Characteristics
Fig 4.
Typical Output Characteristics
Fig 6.
Typical Transfer Characteristics
Fig 7.
Normalized On-Resistance vs. Temperature
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical Total Gate Charge vs
Gate-to-Source Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
3.0
4.0
5.0
6.0
7.0
VGS, Gate-to-Source Voltage (V)
0.01
0.10
1.00
10.00
100.00
ID
(
)
VDS = 10V
60μs PULSE WIDTH
TJ = 150°C
TJ = 25°C
TJ = -40°C
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
TD
ID = 10.3A
VGS = 10V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
ID
60μs PULSE WIDTH
Tj = 25°C
6.0V
VGS
15V
10V
8.0V
7.0V
6.0V
TOP
BOTTOM
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
ID
60μs PULSE WIDTH
Tj = 150°C
6.0V
VGS
15V
10V
8.0V
7.0V
6.0V
TOP
BOTTOM
0
20
40
60
QG Total Gate Charge (nC)
0
4
8
12
16
20
VG
ID= 6.2A
VDS= 50V
VDS= 20V
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