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參數(shù)資料
| 型號： | IRF6644PBF |
| 廠商： | International Rectifier |
| 英文描述： | DirectFET Power MOSFET |
| 中文描述： | DirectFET功率MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 261K |
| 代理商： | IRF6644PBF |
www.irf.com
1
8/18/06
DirectFET
Power MOSFET
DirectFET
ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1.
Typical On-Resistance Vs. Gate Voltage
Fig 2.
Typical On-Resistance Vs. Drain Current
Description
The IRF6644PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6644PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Units
V
A
mJ
A
220
6.2
Max.
100
8.3
60
82
±20
10.3
4
6
VGS, Gate-to-Source Voltage (V)
8
10
12
14
16
0.00
0.02
0.04
0.06
0.08
T
TJ = 25°C
TJ = 125°C
ID = 6.2A
0
4
8
12
16
20
ID, Drain Current (A)
9
10
11
12
13
TD
TA= 25°C
VGS = 8.0V
VGS = 7.0V
VGS = 10V
VGS = 15V
SH
SJ
SP
MZ
MN
V
DSS
100V max ±20V max 10.3m
@ 10V
Q
g tot
Q
gd
V
GS
R
DS(on)
V
gs(th)
35nC
11.5nC
3.7V
IRF6644PbF
IRF6644TRPbF
RoHS Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 12mH, R
G
= 25
, I
AS
= 6.2A.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF6644TRPBF | DirectFET Power MOSFET |
| IRF6644 | DirectFETPower MOSFET |
| IRF6646 | DirectFET Power MOSFET |
| IRF6662 | DirectFet Power MOSFET Typical values (unless otherwise specified) |
| IRF6691 | HEXFET Power MOSFET plus Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF6644TR1 | 功能描述:MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6644TR1PBF | 功能描述:MOSFET MOSFT 100V 60A 13mOhm 35nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6644TR1PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6644TRPBF | 功能描述:MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6645 | 功能描述:MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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