參數(shù)資料
型號： IBMN364164CT3C-68
英文描述： x16 SDRAM
中文描述： x16內(nèi)存
文件頁數(shù)： 44/71頁
文件大?。?/td> 1251K
代理商： IBMN364164CT3C-68
IBMN364164
IBMN364404
64Mb Synchronous DRAM - Die Revision C
IBMN364804
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 44 of 71
19L3265.E35856B
1/01
Timing Diagrams
Page
AC Parameters for Write Timing............................................................................................................... 45
AC Parameters for Read Timing (3/3/3), BL=4......................................................................................... 46
AC Parameters for Read Timing (2/2/2), BL=2......................................................................................... 47
AC Parameters for Read Timing (3/2/2), BL=2......................................................................................... 48
AC Parameters for Read Timing (3/3/3), BL=2......................................................................................... 49
Mode Register Set.................................................................................................................................... 50
Power on Sequence and Auto Refresh (CBR).......................................................................................... 51
Clock Suspension / DQM During Burst Read .......................................................................................... 52
Clock Suspension / DQM During Burst Write .......................................................................................... 53
Power Down Mode and Clock Suspend ................................................................................................... 54
Auto Refresh (CBR).................................................................................................................................. 55
Self Refresh (Entry and Exit) .................................................................................................................... 56
Random Row Read (Interleaving Banks) with Precharge, BL=8.............................................................. 57
Random Row Read (Interleaving Banks) with Auto-precharge, BL=8...................................................... 58
Random Row Write (Interleaving Banks) with Auto-Precharge, BL=8...................................................... 59
Random Row Write (Interleaving Banks) with Precharge, BL=8 .............................................................. 60
Read/Write Cycle
Interleaved Column Read Cycle ............................................................................................................... 62
................................................................................................................................ 61
Auto Precharge after a Read Burst, BL=4 ................................................................................................ 63
Auto Precharge after a Write Burst, BL=4 ................................................................................................ 64
Burst Read and Single Write Operation.................................................................................................... 65
Full Page Burst Read and Single Write Operation....................................................................................66
CS Function (Only CS signal needs to be asserted at minimum rate)...................................................... 67
相關(guān)PDF資料
PDF描述
IBMN364164CT3C-75A x16 SDRAM
IBMN364404CT3C-260 x4 SDRAM
IBMN364404CT3C-360 x4 SDRAM
IBMN364404CT3C-75A x4 SDRAM
IBMN364804CT3C-260 x8 SDRAM
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