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| 型號： | IBMN364164CT3C-68 |
| 英文描述： | x16 SDRAM |
| 中文描述： | x16內(nèi)存 |
| 文件頁數(shù)： | 10/71頁 |
| 文件大小： | 1251K |
| 代理商： | IBMN364164CT3C-68 |
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IBMN364164
IBMN364404
64Mb Synchronous DRAM - Die Revision C
IBMN364804
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 10 of 71
19L3265.E35856B
1/01
Read and Write Access Modes
After a bank has been activated, a read or write cycle can be executed. This is accomplished by setting RAS
high and CAS low at the clock’s rising edge after the necessary RAS to CAS delay (t
RCD
). WE must also be
defined at this time to determine whether the access cycle is a read operation (WE high), or a write operation
(WE low). The address inputs determine the starting column address.
The SDRAM provides a wide variety of fast access modes. A single Read or Write Command will initiate a
serial read or write operation on successive clock cycles up to 150 MHz. The number of serial data bits for
each access is equal to the burst length, which is programmed into the Mode Register. If the burst length is
full page, data is repeatedly read out or written until a Burst Stop or Precharge Command is issued.
Similar to Page Mode of conventional DRAMs, a read or write cycle can not begin until the sense amplifiers
latch the selected row address information. The refresh period (t
REF
) is what limits the number of random col-
umn accesses to an activated bank. A new burst access can be done even before the previous burst ends.
The ability to interrupt a burst operation at every clock cycle is supported; this is referred to as the 1-N rule.
When the previous burst is interrupted by another Read or Write Command, the remaining addresses are
overridden by the new address.
Precharging an active bank after each read or write operation is not necessary providing the same row is to
be accessed again. To perform a read or write cycle to a different row within an activated bank, the bank must
be precharged and a new Bank Activate command must be issued. When more than one bank is activated,
interleaved (ping pong) bank Read or Write operations are possible. By using the programmed burst length
and alternating the access and precharge operations between multiple banks, fast and seamless data access
operation among many different pages can be realized. When multiple banks are activated, column to column
interleave operation can be done between different pages. Finally, Read or Write Commands can be issued
to the same bank or between active banks on every clock cycle.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IBMN364164CT3C-75A | x16 SDRAM |
| IBMN364404CT3C-260 | x4 SDRAM |
| IBMN364404CT3C-360 | x4 SDRAM |
| IBMN364404CT3C-75A | x4 SDRAM |
| IBMN364804CT3C-260 | x8 SDRAM |
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