- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄360707 > IBMN364164CT3C-68 x16 SDRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | IBMN364164CT3C-68 |
| 英文描述： | x16 SDRAM |
| 中文描述： | x16內(nèi)存 |
| 文件頁(yè)數(shù)： | 16/71頁(yè) |
| 文件大?。?/td> | 1251K |
| 代理商： | IBMN364164CT3C-68 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)當(dāng)前第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)
IBMN364164
IBMN364404
64Mb Synchronous DRAM - Die Revision C
IBMN364804
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 16 of 71
19L3265.E35856B
1/01
Write Interrupted by a Read
A Read Command will interrupt a burst write operation on the same clock cycle that the Read Command is
registered. The DQs must be in the high impedance state at least one cycle before the interrupting read data
appears on the outputs to avoid data contention. When the Read Command is registered, any residual data
from the burst write cycle will be ignored. Data that is presented on the DQ pins before the Read Command is
initiated will actually be written to the memory.
Minimum Write to Read Interval
COMMAND
NOP
WRITE A
READ B
NOP
NOP
NOP
NOP
NOP
NOP
t
CK2,
DQs
CAS latency = 2
DIN A
0
t
CK3,
DQs
CAS latency = 3
DIN A
0
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
Input data for the Write is masked.
Input data must be removed from the DQs at least one clock
cycle before the Read data appears on the outputs to avoid
data contention.
DOUT B
0
DOUT B
1
DOUT B
2
DOUT B
3
DOUT B
0
DOUT B
1
DOUT B
2
DOUT B
3
(Burst Length = 4, CAS latency = 2, 3)
: “H” or “L”
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IBMN364164CT3C-75A | x16 SDRAM |
| IBMN364404CT3C-260 | x4 SDRAM |
| IBMN364404CT3C-360 | x4 SDRAM |
| IBMN364404CT3C-75A | x4 SDRAM |
| IBMN364804CT3C-260 | x8 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IBMPPC403GAJC33C1 | 制造商:IBM 功能描述: |
| IBMPPC750CLGEQ4023 | 制造商:IBM 功能描述:MPU 750CL RISC 32BIT 90NM 400MHZ 1.15V/1.8V 278FCBGA - Trays |
| IBMPPC750CLGEQ5023 | 制造商:IBM Microelectronics 功能描述:MPU 750CL RISC 32BIT 90NM 500MHZ 1.15V/1.8V 278FCBGA - Trays |
| IBMPPC750CLGEQA033 | 制造商:IBM 功能描述:MPU 750CL RISC 32BIT 90NM 1GHZ 1.15V/1.8V 278FCBGA - Trays 制造商:IBM 功能描述:IBMIBMPPC750CLGEQA033 CPU PPC 750CL 1GHZ |
| IBN100 | 制造商:Hubbell Wiring Device-Kellems 功能描述:ICON, BLANK,BR,100PK |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。