參數(shù)資料
型號: HB52R329E22
廠商: Hitachi,Ltd.
英文描述: 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
中文描述: 注冊使用256 MB SDRAM的內(nèi)存(256 MB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 37/67頁
文件大?。?/td> 630K
代理商: HB52R329E22
HB52R329E22-D
37
2. Single write:
A single write operation is enabled by setting OPCODE (A9, A8) to (1, 0). In a single
write operation, data is only written to the column address and the bank select address (BA) specified by
the write command set cycle without regard to the burst length setting. (The latency of data input is 1
clock).
WRIT
CK
Command
Din
ACTV
Row
Column
in 0
Address
t
RCD
Auto Precharge
Read with auto-precharge:
In this operation, since precharge is automatically performed after completing
a read operation, a precharge command need not be executed after each read operation. The command
executed for the same bank after the execution of this command must be the bank active (ACTV)
command. In addition, an interval defined by l
APR
is required before execution of the next command.
CE
latency
Precharge start cycle
4
2 cycle before the final data is output
3
1 cycle before the final data is output
Burst Read
(Burst Length = 4)
CK
lRAS
CL=3 Command
CL=4 Command
Dout
Dout
Note: Internal auto-precharge starts at the timing indicated by " ".
And an interval of t
RAS
(l
RAS
) is required between previous active (ACTV) command and internal precharge " ".
ACTV
READ A
ACTV
out3
out2
out1
out0
lRAS
ACTV
READ A
ACTV
out3
out2
out1
out0
l
APR
= 0
l
APR
= 0
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HB52R329E22-A6F 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
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