參數(shù)資料
型號(hào)： HB52R329E22
廠商： Hitachi,Ltd.
英文描述： 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM)
中文描述： 注冊(cè)使用256 MB SDRAM的內(nèi)存（256 MB的寄存同步的DRAM內(nèi)存）
文件頁(yè)數(shù)： 16/67頁(yè)
文件大?。?/td> 630K
代理商： HB52R329E22
HB52R329E22-D
16
DC Characteristics
(Ta = 0 to 55
°
C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V)
HB52R329E22
-A6D/B6D
Parameter
Symbol
Min
Max
Unit
Test conditions
Notes
Operating current
(
CE
latency = 3)
(
CE
latency = 4)
I
CC1
I
CC1
—
2315
mA
Burst length = 1
t
RC
= min
1, 2, 3
—
2315
mA
Standby current in power down I
CC2P
Standby current in power down
(input signal stable)
—
803
mA
CKE = V
IL
, t
CK
= 12 ns
CKE = V
IL
, t
CK
=
∞
6
I
CC2PS
—
767
mA
7
Standby current in non power
down
I
CC2N
—
1271
mA
CKE,
S
= V
IH
,
t
CK
= 12 ns
CKE = V
IL
, t
CK
= 12 ns
4
Active standby current in power
down
I
CC3P
—
839
mA
1, 2, 6
Active standby current in non
power down
I
CC3N
—
1415
mA
CKE,
S
= V
IH
,
t
CK
= 12 ns
t
CK
= min, BL = 4
1, 2, 4
Burst operating current
(
CE
latency = 3)
(
CE
latency = 4)
I
CC4
I
CC4
I
CC5
I
CC6
—
2315
mA
1, 2, 5
—
2315
mA
Refresh current
—
3125
mA
t
RC
= min
V
IH
≥
V
– 0.2 V
V
IL
≤
0.2 V
0
≤
Vin
≤
V
CC
0
≤
Vout
≤
V
CC
DQ = disable
3
Self refresh current
—
731
mA
8
Input leakage current
I
LI
I
LO
–10
10
μ
A
μ
A
Output leakage current
–10
10
Output high voltage
V
OH
V
OL
2.4
—
V
I
OH
= –4 mA
I
OL
= 4 mA
Output low voltage
Notes: 1. I
depends on output load condition when the device is selected. I
CC
(max) is specified at the
output open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CK operating current.
7. After power down mode, no CK operating current.
8. After self refresh mode set, self refresh current.
—
0.4
V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HB52R329E22-A6F 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
HB52R329E22-B6F 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
HB52R329E22-F 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM
HB52R329E2-B6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
HB52R649E1U-A6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM
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