參數(shù)資料
型號: GS8180D18
廠商: GSI TECHNOLOGY
英文描述: 1Mb x 18Bit Separate I/O Sigma DDR SRAM(1M x 18位獨立I/O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM)
中文描述: 1兆x 18位獨立的I / O西格瑪?shù)腄DR SRAM的(100萬× 18位獨立的I / O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM)
文件頁數(shù): 33/33頁
文件大?。?/td> 874K
代理商: GS8180D18
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
33/33
2000, Giga Semiconductor, Inc.
A
Advanced Information
GS8180D09/18B-333/300/275/250
Revision History
Rev. Code: Old; New
Types of Changes
Format or Content
Revisions
8180D0918_r1; 8180D0918_r1_01
Format
Updated format to comply with Technical Publications
standards
ID register contents updated on page 24
相關PDF資料
PDF描述
GS8180S36 512K x 36Bit Separate I/O Sigma DDR SRAM(512K x 36位獨立I/O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM)
GS8180S18 1Mb x 18Bit Separate I/O Sigma DDR SRAM(1M x 18位獨立I/O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM)
GS8180S09 2Mb x 9Bit Separate I/O Sigma DDR SRAM(2M x 9位獨立I/O接口雙數(shù)據(jù)速率讀和寫模式靜態(tài)ΣRAM)
GS820322T-138 64K x 32 2M Synchronous Burst SRAM
GS82032Q-100 64K x 32 2M Synchronous Burst SRAM
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