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參數(shù)資料
| 型號(hào)： | EDS1232AABB-75L |
| 英文描述： | SDRAM|4X1MX32|CMOS|BGA|90PIN|PLASTIC |
| 中文描述： | 內(nèi)存| 4X1MX32 |的CMOS | BGA封裝| 90PIN |塑料 |
| 文件頁(yè)數(shù)： | 45/55頁(yè) |
| 文件大?。?/td> | 570K |
| 代理商： | EDS1232AABB-75L |
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EDS1232AABB, EDS1232AATA
Data Sheet E0205E30 (Ver. 3.0)
5
Electrical Specifications
All voltages are referenced to VSS (GND).
After power up, wait more than 100 s and then, execute Power on sequence and CBR (auto) Refresh before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Note
Voltage on any pin relative to VSS
VT
–0.5 to +4.6
V
Supply voltage relative to VSS
VDD, VDDQ
–0.5 to +4.6
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
1.0
W
Operating ambient temperature
TA
0 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions (TA = 0 to +70
°°°°C)
Parameter
Symbol
min.
typ.
max.
Unit
Notes
Supply voltage
VDD, VDDQ
3.0
3.3
3.6
V
VSS
0
V
Input high voltage
VIH
2.0
VDD + 0.3*
1
V
Input low voltage
VIL
–0.3*
2
0.8
V
Notes: 1. VIH (max.) = VDDQ + 1.5V (pulse width
≤ 5ns).
2. VIL (min.) = –1.5V (pulse width
≤ 5ns).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDS1232AABB-75L-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM |
| EDS1232AASE | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM (4M words x 32 bits) |
| EDS1232AASE-60-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM (4M words x 32 bits) |
| EDS1232AASE-60L-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM (4M words x 32 bits) |
| EDS1232AASE-75-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM (4M words x 32 bits) |
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