參數(shù)資料
型號: EDS1232AABB-75L
英文描述: SDRAM|4X1MX32|CMOS|BGA|90PIN|PLASTIC
中文描述: 內存| 4X1MX32 |的CMOS | BGA封裝| 90PIN |塑料
文件頁數(shù): 10/55頁
文件大?。?/td> 570K
代理商: EDS1232AABB-75L
EDS1232AABB, EDS1232AATA
Data Sheet E0205E30 (Ver. 3.0)
18
Function Truth Table*
1
Current state
/CS
/RAS /CAS /WE Address
Command
Operation
Notes
Idle
H
×
DESL
Nop or power down
2
L
H
×
NOP or BST
Nop or power down
2
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
BA, CA, A10
WRIT/ WRITA
ILLEGAL
3
L
H
BA, RA
ACT
Row activating
L
H
L
BA, A10
PRE/PALL
Nop
L
H
×
REF/SELF
CBR (auto) refresh or self refresh
4
L
OPCODE
MRS
Mode register accessing
Row active
H
×
DESL
Nop
L
H
×
NOP or BST
Nop
L
H
L
H
BA, CA, A10
READ/READA
Begin read: Determine AP
5
L
H
L
BA, CA, A10
WRIT/ WRITA
Begin write: Determine AP
5
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A10
PRE/PALL
Precharge
6
L
H
×
REF/SELF
ILLEGAL
L
OPCODE
MRS
ILLEGAL
Read
H
×
DESL
Continue burst to end
→ Row active
L
H
×
NOP
Continue burst to end
→ Row active
L
H
L
×
BST
Burst stop
→ Row active
L
H
L
H
BA, CA, A10
READ/READA
Terminate burst, new read: Determine AP
7
L
H
L
BA, CA, A10
WRIT/WRITA
Terminate burst, begin write: Determine AP 7, 8
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A10
PRE/PALL
Terminate burst, Precharging
L
H
×
REF/SELF
ILLEGAL
L
OPCODE
MRS
ILLEGAL
Write
H
×
DESL
Continue burst to end
→ Write recovering
L
H
×
NOP
Continue burst to end
→ Write recovering
L
H
L
×
BST
Burst stop
→ Row active
L
H
L
H
BA, CA, A10
READ/READA
Terminate burst, start read : Determine AP
7, 8
L
H
L
BA, CA, A10
WRIT/WRITA
Terminate burst, new write : Determine AP
7
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A10
PRE/PALL
Terminate burst, Precharging
9
L
H
×
REF/SELF
ILLEGAL
L
OPCODE
MRS
ILLEGAL
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