參數(shù)資料
型號(hào)： AM49BDS640AH
廠商： Spansion Inc.
英文描述： Stacked Multichip Package (MCP), Flash Memory and pSRAM CMOS 1.8 Volt-only Simultaneous Read/Write
中文描述： 堆疊多芯片封裝（MCP），閃存和1.8伏，只有同時(shí)讀/寫移動(dòng)存儲(chǔ)芯片的CMOS
文件頁(yè)數(shù)： 79/84頁(yè)
文件大?。?/td> 763K
代理商： AM49BDS640AH
December 5, 2003
Am49BDS640AH
77
A D V A N C E I N F O R M A T I O N
PSRAM AC CHARACTERISTICS
Item
Symbol
70 at 1.8V
80 at 1.7V
85 at 1.65V
Units
Min.
Max.
Min.
Max.
Read Cycle Time
t
RC
t
SK
t
AA
t
CO
t
OE
70
80
85
ns
Address Skew
10
10
10
ns
Address Access Time
70
80
85
ns
Chip Enable to Valid Output
70
80
85
ns
Output Enable to Valid Output
15
20
25
ns
Byte Select to Valid Output
t
LB
, t
UB
t
LZ
t
OLZ
t
LBZ
, t
UBZ
t
HZ
t
OHZ
t
LBHZ
, t
UBHZ
t
OH
70
80
85
ns
Chip Enable to Low-Z output
10
10
10
ns
Output Enable to Low-Z Output
5
5
5
ns
Byte Select to Low-Z Output
10
10
ns
Chip Disable to High-Z Output
0
20
20
0
20
ns
Output Disable to High-Z Output
0
20
20
0
20
ns
Byte Select Disable to High-Z Output
0
20
20
0
20
ns
Output Hold from Address Change
5
5
5
ns
Write Cycle Time
t
WC
t
CW
t
AW
70
80
85
ns
Chip Enable to End of Write
70
80
85
ns
Address Valid to End of Write
70
80
85
ns
Byte Select to End of Write
t
LBW
, t
UBW
t
WP
t
WR
t
WHZ
t
AS
t
DW
t
DH
t
OW
70
80
85
ns
Write Pulse Width
55
30000
60
30000
65
30000
ns
Write Recovery Time
0
0
0
ns
Write to High-Z Output
20
20
20
ns
Address Setup Time
0
0
0
ns
Data to Write Time Overlap
25
25
25
ns
Data Hold from Write Time
0
0
0
ns
End Write to Low-Z Output
5
5
5
ns
Min.
Max.
相關(guān)PDF資料
PDF描述
AM49BDS640AHD8I Stacked Multichip Package (MCP), Flash Memory and pSRAM CMOS 1.8 Volt-only Simultaneous Read/Write
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