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參數(shù)資料
| 型號(hào)： | AM49BDS640AH |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multichip Package (MCP), Flash Memory and pSRAM CMOS 1.8 Volt-only Simultaneous Read/Write |
| 中文描述： | 堆疊多芯片封裝（MCP），閃存和1.8伏，只有同時(shí)讀/寫移動(dòng)存儲(chǔ)芯片的CMOS |
| 文件頁數(shù)： | 78/84頁 |
| 文件大?。?/td> | 763K |
| 代理商： | AM49BDS640AH |
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76
Am49BDS640AH
December 5, 2003
A D V A N C E I N F O R M A T I O N
PSRAM DC AND OPERATING CHARACTERISTICS
Notes:
1. Typical values are measured at V
CC
= V
CC
Typ., T
A
= 25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to
drive output capacitance expected in the actual system.
Item
Symbol
Comments
Min.
Typ
1
Max.
Unit
Supply Voltage
V
CC
V
CCQ
V
IH
V
IL
V
OH
V
OL
I
LI
I
LO
1.65
1.8
2.2
V
Supply Voltage for I/O
1.65
-
Vcc
V
Input High Voltage
1.4
V
CC
+0.3
0.4
V
Input Low Voltage
–
0.3
V
Output High Voltage
I
OH
= 0.2mA
I
OL
= -0.2mA
V
IN
= 0 to V
CC
OE# = V
IH
or Chip Disabled
V
CC
=V
CC
MAX, V
IN
=V
IH
/ V
IL
Chip Enabled, I
OUT
= 0
V
CC
=V
CC
MAX, V
IN
=V
IH
/ V
IL
Chip Enabled, I
OUT
= 0
t
A
= 85
o
C, V
CC
= 1.8V
t
A
= 85
o
C, V
CC
= 2.2V
0.8V
CCQ
V
Output Low Voltage
0.2
V
Input Leakage Current
0.5
μ
A
Output Leakage Current
0.5
μ
A
Read/Write Operating Supply Current
at 1
μ
s Cycle Time
2
I
CC1
3
mA
Read/Write Operating Supply Current
at Min Cycle Time
2
I
CC2
25
mA
Standby Current
I
SB
60
μ
A
100
μ
A
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