I
參數(shù)資料
型號(hào)： ADUC7032BSTZ-8V-RL
廠商： Analog Devices Inc
文件頁數(shù)： 35/128頁
文件大?。?/td> 0K
描述： IC BATTERY SENSOR PREC 48-LQFP
標(biāo)準(zhǔn)包裝： 1
系列： MicroConverter® ADuC7xxx
核心處理器： ARM7
芯體尺寸： 16/32-位
速度： 20.48MHz
連通性： LIN，SPI，UART/USART
外圍設(shè)備： POR，PSM，溫度傳感器，WDT
輸入/輸出數(shù)： 9
程序存儲(chǔ)器容量： 96KB（48K x 16）
程序存儲(chǔ)器類型： 閃存
RAM 容量： 1.5K x 32
電壓 - 電源 (Vcc/Vdd)： 3.5 V ~ 18 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 2x16b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 105°C
封裝/外殼： 48-LQFP
包裝： 標(biāo)準(zhǔn)包裝
其它名稱： ADUC7032BSTZ-8V-RLDKR
Preliminary Technical Data
ADuC7032
Rev. PrD | Page 14 of 128
Parameter
Test Conditions/Comments
Min
Typ
Max
Unit
IDD – MCU Powered Down1
ADC Low Power-Plus Mode, measured over an
ambient temperature range of -10°C to +40°C
(Continuous ADC Conversion )
520
700
A
IDD – MCU Powered Down
Average Current, Measured with Wake and
Watchdog Timer clocked from Low Power
Oscillator
120
300
A
IDD – MCU Powered Down1
Average Current, Measured with Wake and
Watchdog Timer clocked from Low Power
Oscillator over an ambient temperature range of
-10°C to +40°C
120
175
A
IDD – Current ADC
IDD – Voltage/Temperature ADC
IDD – Precision Oscillator
Per ADC
1.7
0.5
400
mA
A
1 These numbers are not production tested but are guaranteed by design and/or characterization data at production release
2 Valid for Current ADC Gain setting of PGA=4 to 64
3 These numbers include temperature drift
4 Tested at Gain Range=4, Self-Offset Calibration will remove this error.
5 Measured with an internal short after an initial offset calibration.
6 Measured with an internal short
7 These numbers include internal reference temperature drift.
8 Factory Calibrated at Gain = 1.
9 System calibration at specific gain range will remove the error at this gain range
10 When used in conjunction with ADCREF, the Low Power Mode Reference error MMR.
11 Using ADC Normal Mode Voltage Reference
12 Typical Noise in Low Power modes is measured with Chop enabled.
13 Voltage Channel Specifications include resistive attenuator input stage
14 System Calibration will remove this error
15 rms noise is referred to Voltage attenuator input, for example at FADC=1KHz, typical rms noise at the ADC input is 7.5uV, scaled by the attenuator (24) yields these
input referred noise figures
16 ADC Self Offset calibration will remove this error.
17 Valid after an initial Self Calibration
18 Factory calibrated for the internal temperature sensor during final production test.
19 System Calibration will remove this error
20 In ADC Low Power Mode the input range is fixed at ±9.375mV. In ADC Low Power Plus Mode the input range is fixed at ±2.34375mV.
21 It is possible to extend the ADC input range by up to 10% by modifying the factory set value of the Gain Calibration register or using system calibration. This approach
can also be used to reduce the ADC Input Range (LSB Size).
22 Limited by minimum absolute input voltage range.
23 Valid for a differential input less than 10mV
24 Measured using Box Method
25 The long-term stability specification is non cumulative. The drift in subsequent 1,000 hour periods is significantly lower than in the first 1,000 hour period.
26 References of up to REG_AVDD can be accommodated by enabling an internal Divide-by-2
27 Die Temperature.
28 Endurance is qualified to 10,000 cycles as per JEDEC Std. 22 method A117 and measured at -40°C, +25°C and +125°C. Typical endurance at 25°C is 170,000 cycles.
29 Retention lifetime equivalent at junction temperature (Tj) = 85°C as per JEDEC Std. 22 method A117. Retention lifetime will de-rate with junction temperature.
30 Low Power oscillator can be calibrated against either the precision oscillator or the external 32.768kHz crystal in user code
31 These numbers are not production tested, but are supported by LIN Compliance testing.
32 Specified after Rlimit of 39Ohms
33 The MCU core is not shutdown but an interrupt is generated, if enabled.
34 Thermal Impedance can be used to calculate the thermal gradient from ambient to die temperature.
35 Internal Regulated Supply available at REG_DVDD (ISOURCE =5mA), and REG_AVDD (ISOURCE =1mA)
36 Typical, additional supply current consumed during Flash memory program and erase cycles is 7mA and 5mA respectively.
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