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參數(shù)資料
| 型號： | 7007L35PF |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 32K X 8 DUAL-PORT SRAM, 35 ns, PQFP80 |
| 封裝： | 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-80 |
| 文件頁數(shù)： | 20/21頁 |
| 文件大?。?/td> | 168K |
| 代理商： | 7007L35PF |
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
8
NOTES:
1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM,
CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL.
4. 'X' in part numbers indicates power rating (S or L).
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(4)
AC Test Conditions
Figure 2. Output Test Load
(for tLZ, tHZ, tWZ, tOW)
* Including scope and jig.
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
5ns Max.
1.5V
Figures 1 and 2
2940 tbl 11
Figure 1. AC Output Test Load
2940 drw 06
893
30pF
347
5V
DATAOUT
BUSY
INT
893
5pF*
347
5V
DATAOUT
2940 drw 05
.
7007X15
Com'l Only
7007X20
Com'l & Ind
7007X25
Com'l, Ind
& Military
Unit
Symbol
Parameter
Min.Max.
Min.Max.Min.
Max.
READ CYCLE
tRC
Read Cycle Time
15
____
20
____
25
____
ns
tAA
Address Access Time
____
15
____
20
____
25
ns
tACE
Chip Enable Access Time
(3)
____
15
____
20
____
25
ns
tAOE
Output Enable Access Time
____
10
____
12
____
13
ns
tOH
Output Hold from Address Change
3
____
3
____
3
____
ns
tLZ
Output Low-Z Time(1,2)
3
____
3
____
3
____
ns
tHZ
Output High-Z Time
(1,2)
____
10
____
12
____
15
ns
tPU
Chip Enable to Power Up Time
(2)
0
____
0
____
0
____
ns
tPD
Chip Disable to Power Down Time (2)
____
15
____
20
____
25
ns
tSOP
Semaphore Flag Update Pulse (
OE or SEM)10
____
10
____
12
____
ns
tSAA
Semaphore Address Access Time
____
15
____
20
____
25
ns
2940 tbl 12a
7007X35
Com'l, Ind
& Military
7007X55
Com'l, Ind
& Military
Unit
Symbol
Parameter
Min.Max.Min.Max.
READ CYCLE
tRC
Read Cycle Time
35
____
55
____
ns
tAA
Address Access Time
____
35
____
55
ns
tACE
Chip Enable Access Time
(3)
____
35
____
55
ns
tAOE
Output Enable Access Time
____
20
____
30
ns
tOH
Output Hold from Address Change
3
____
3
____
ns
tLZ
Output Low-Z Time
(1,2)
3
____
3
____
ns
tHZ
Output High-Z Time
(1,2)
____
15
____
25
ns
tPU
Chip Enab le to Power Up Time
(2)
0
____
0
____
ns
tPD
Chip Disable to Power Down Time
(2)
____
35
____
50
ns
tSOP
Semaphore Flag Update Pulse (
OE or SEM)15
____
15
____
ns
tSAA
Semaphore Address Access Time
____
35
____
55
ns
2940 tbl 12b
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 7007L35PF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 5V 256K-Bit 32K x 8 35ns 80-Pin TQFP T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 5V 256KBIT 32KX8 35NS 80TQFP - Tape and Reel |
| 7007L55J | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 7007L55J8 | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 7007L55PF | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 7007L55PF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 5V 256K-Bit 32K x 8 55ns 80-Pin TQFP T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 5V 256KBIT 32KX8 55NS 80TQFP - Tape and Reel |
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