參數(shù)資料
型號(hào)： RD38F1020C0ZTL0
廠商： INTEL CORP
元件分類(lèi)： 存儲(chǔ)器
英文描述： 3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA66
封裝： 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁(yè)數(shù)： 10/70頁(yè)
文件大小： 1223K
代理商： RD38F1020C0ZTL0
3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
10
Datasheet
F-WP#
INPUT
FLASHWRITEPROTECT:
Controlsthelock-downfunctionoftheflexibleLockingfeature.
WhenF-WP#isalogiclow,thelock-downmechanismisenabled
andblocksmarkedlock-
downcannotbeunlockedthroughsoftware.
WhenF-WP#islogichigh,thelock-downmechanismisdisabled
andblockspreviously
locked-downarenowlockedandcanbeunlockedandlockedthroughsoftware.AfterF-WP#goes
low,anyblockspreviouslymarkedlock-downreverttothatstate.
See
Section7.0,“SystemDesignConsiderations”onpage 41
fordetailsonblocklocking.
F-VCC
SUPPLY
FLASHPOWERSUPPLY:
[2.7 V–3.3 V]Suppliespowerfordevicecoreoperations.
F-VCCQ
SUPPLY
FLASHI/OPOWERSUPPLY:
[2.7 V–3.3 V]SuppliespowerfordeviceI/Ooperations.
S-VCC
SUPPLY
SRAMPOWERSUPPLY:
[2.7 V–3.3 V]Suppliespowerfordeviceoperations.
See
Section7.2.2,“F-VCC,F-VPPandF-RP#Transition”onpage 42
fordetailsofpower
connections.
F-VPP
INPUT/
SUPPLY
FLASHPROGRAM/ERASEPOWERSUPPLY:
[1.65 V–3.3 Vor11.4 V–12.6 V]Operatesasan
inputatlogiclevelstocontrolcompleteflashprotection.Suppliespowerforacceleratedflash
programanderaseoperationsin12 V
±
5%range.Thisballcannotbeleftfloating.
Lower
F-
V
PP
≤
V
PPLK
,toprotectallcontentsagainstProgramandErasecommands.
SetF-V
= F-V
forin-systemread,programanderaseoperations.
Inthisconfiguration,
F-V
candropaslowas1.65 Vtoallowforresistorordiodedropfromthesystemsupply.Note
thatifF-V
isdrivenbyalogicsignal,V
IH =
1.65 V.Thatis,F-V
PP
mustremainabove1.65 Vto
performin-systemflashmodifications.
RaiseF-V
to12V
±
5%forfasterprogramanderaseinaproductionenvironment.
Applying
12 V
±
5%toF-V
canonlybedoneforamaximumof1000cyclesonthemainblocksand2500
cyclesontheparameterblocks.
F-V
PP
maybeconnectedto12 Vforatotalof80hoursmaximum.
F-VSS
SUPPLY
FLASHGROUND:
Forallinternalcircuitry.Allgroundinputs
must
beconnected.
S-VSS
SUPPLY
SRAMGROUND:
Forallinternalcircuitry.Allgroundinputs
must
beconnected.
NC
NOTCONNECTED:Internallydisconnectedwithinthedevice.
Table2. 3VoltIntel
Advanced+BootBlockStacked-CSPBallDescriptions(Sheet2of2)
Symbol
Type
NameandFunction
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RD38F1020C0ZTL0A 制造商:Micron Technology Inc 功能描述:32C/8S SCSP 3.0 - Trays
RD38F1020C0ZTL0B 制造商:Micron Technology Inc 功能描述:32C/8S SCSP 3.0 - Tape and Reel
RD38F1020C0ZTL0SB93 功能描述:IC FLASH 32MBIT 70NS 66EBGA RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:FLASH 存儲(chǔ)容量:1M (64K x 16) 速度:150ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤(pán)
RD38F1020W0YBQ0 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:Wireless Flash Memory (W18/W30 SCSP)
RD38F1020W0YBQ0SB93 功能描述:IC FLASH 32MBIT 65NS 66EBGA RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤(pán) 其它名稱(chēng):497-5040
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