參數(shù)資料
型號(hào)： RD28F6408W30T85
廠商： INTEL CORP
元件分類： 存儲(chǔ)器
英文描述： 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA80
封裝： 14 X 8 MM, 0.80 MM PITCH, STACK, CSP-80
文件頁(yè)數(shù)： 41/82頁(yè)
文件大?。?/td> 749K
代理商： RD28F6408W30T85
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
Preliminary
35
11.0
Electrical Specifications
11.1
Absolute Maximum Ratings
NOTES:
1. All specified voltages are with respect to V
SS
. Minimum DC voltage is –0.5 V on input/output signals and
–0.2 V on V
CC
and V
PP
supplies. During transitions, this level may undershoot to –2.0 V for periods <20 ns
which, during transitions, may overshoot to V
CC
+2.0 V for periods <20 ns.
2. Maximum DC voltage on V
PP
may overshoot to +14.0 V for periods <20 ns.
3. V
PP
program voltage is normally V
PP1
. V
PP
can be V
PP2
for 1000 cycles on the main blocks and 2500 cycles
on the parameter blocks during program/erase.
4. Output shorted for no more than one second. No more than one output shorted at a time.
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage. These are stress
ratings only. Operation beyond the “Operating Conditions” is not recommended and extended exposure
beyond the “Operating Conditions” may affect device reliability.
11.2
Extended Temperature Operation
Parameter
Note
Maximum Rating
Temperature under Bias
–25 °C to +85 °C
Storage Temperature
–65 °C to +125 °C
Voltage On Any Signals (except V
CC
, V
CCQ
, V
PP
and S-V
CC
)
1
–0.5 V to +3.80 V
V
PP
Voltage
1,2,3
–0.2 V to +14 V
V
CC
Voltage
1
–0.2 V to +2.40 V
V
CCQ
and S-V
CC
Voltage
1
–0.2 V to +3.36 V
Output Short Circuit Current
4
100 mA
NOTICE:
This datasheet contains preliminary information on new products in production. Specifications are
subject to change without notice. Verify with your local Intel Sales office that you have the latest datasheet before
finalizing a design
.
Symbol
Parameter
Note
Min
Max
Unit
T
A
Operating Temperature
–25
85
°C
V
CC
V
CC
Supply Voltage
1.70
1.90
V
V
CCQ
, S-V
CC
Flash I/O and SRAM Supply Voltages
2
2.20
3.30
V
V
PP1
V
PP
Voltage Supply (Logic Level)
1
0.90
1.90
V
V
PP2
Factory Programming V
PP
1
11.4
12.6
t
PPH
Maximum V
PP
Hours
V
PP
= V
PP2
1
80
Hours
Block Erase
Cycles
Main and Parameter Blocks
V
PP
= V
CC
1
100,000
Cycles
Main Blocks
V
PP
= V
PP2
1
1000
Parameter Blocks
V
PP
= V
PP2
1
2500
相關(guān)PDF資料
PDF描述
RD30HUF1 30V N-Channel PowerTrench MOSFET
RD38F1020C0ZTL0 3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD38F1010C0ZBL0 CAPACITOR, BESTCAP 33 MILLI FARAD 7V CAPACITOR, BESTCAP 33 MILLI FARAD 7V; CAPACITANCE:33MF; VOLTAGE RATING, DC:7V; CAPACITOR DIELECTRIC TYPE:ELECTRONIC; SERIES:BESTCAP; TEMP, OP. MAX:75(DEGREE C); TEMP, OP. MIN:-20(DEGREE C); RoHS Compliant: Yes
RD28F1604C3T90 3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F1602C3T90 3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RD28S-6/206708 功能描述:BLWR DUAL CENT 470X378MM 230VAC RoHS:是 類別:風(fēng)扇，熱管理 >> 風(fēng)扇 - AC 系列:RD28S 其它有關(guān)文件:Declaration of Conformity 標(biāo)準(zhǔn)包裝:1 系列:- 氣流:- 軸承類型:- 風(fēng)扇類型:- 特點(diǎn):- 雜訊:- 功率（瓦特）:- RPM:- 尺寸/尺寸:- 靜態(tài)壓力:- 端子:- 電壓 - 額定:- 重量:- 額定電流:- 預(yù)期壽命:- 工作溫度:- 電壓范圍:- 其它名稱:Q5464961
RD28S-6206708 制造商:EBMPAPST 制造商全稱:ebm-papst 功能描述:CENTRIFUGAL BLOWER
RD2A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Ultra-Fast-Recovery Rectifier Diodes
RD2A337M12025PL 制造商:Samwha Electronics 功能描述:Radial Capacitor - 330uF 100V
RD2A476M1012MBB100 制造商:Samwha Electronics 功能描述:RD Series Radial 100 V 47 uF 10 x 12.5 mm 105 C Electrolytic Capacitor
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*