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參數(shù)資料
| 型號： | RD30HUF1 |
| 廠商： | Mitsubishi Electric Corporation |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 398K |
| 代理商： | RD30HUF1 |
MITSUBISHI RF POWER MOS FET
RD30HUF1
Silicon MOSFET Power Transistor,520MHz,30W
RD30HUF1
MITSUBISHI ELECTRIC
1/7
REV.1 14 MAY. 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
RD30HUF1 is a MOS FET type transistor specifically
designed for UHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz
High Efficiency: 55%typ.
APPLICATION
For output stage of high power amplifiers in UHF
band mobile radio sets.
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
VDSS
Drain to source voltage
VGSS
Gate to source voltage
Pch
Channel dissipation
Pin
Input power
Tj
Junction temperature
Tstg
Storage temperature
Rth-c
Thermal resistance
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
CONDITIONS
RATINGS UNIT
30
+/-20
75
7.5
175
-40 to +175
2.0
Tc=25
°C
Zg=Zl=50
Junction to case
V
V
W
W
°C
°C
°C/W
LIMITS
TYP
-
-
1.8
35
55
No destroy
UNIT
uA
uA
V
W
%
-
SYMBOL
PARAMETER
CONDITIONS
MIN
-
-
1.3
30
50
MAX.
200
1
2.3
-
-
I
DSS
I
GSS
V
TH
Pout
η
D1
Zero gate voltage drain current
Gate to source leak current
Gate threshold voltage
Output power
Drain efficiency
Load VSWR tolerance
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=520MHz,V
DD
=12.5V
Pin=3.0W,Idq=1.0A
V
DD
=15.2V,Po=30W(PinControl)
Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
OUTLINE DRAWING
1
3
5
R1.6
2
4-C1
2
6
0
2.8+/-0.3
3
18.0+/-0.3
22.0+/-0.3
7.6+/-0.3
1
7.2+/-0.5
PIN
1.Drain
2.Source
3.Gate
UNIT:m
m
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| RD30HUF1_06 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Silicon MOSFET Power Transistor,520MHz,30W |
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| RD30HVF1_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Silicon MOSFET Power Transistor,175MHz,30W |
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