參數(shù)資料
型號(hào)： PF38F40L0YUQ0
廠商： NUMONYX
元件分類(lèi)： PROM
英文描述： 16M X 16 FLASH 1.8V PROM, PBGA88
封裝： 8 X 11 MM, 1 MM HEIGHT, ROHS COMPLIANT, VFBGA-88
文件頁(yè)數(shù)： 88/99頁(yè)
文件大?。?/td> 1419K
代理商： PF38F40L0YUQ0
Intel StrataFlash Wireless Memory (L18) with A/D-Multiplexed I/O
July 2006
Datasheet
Order Number: 313295-002US
89
Intel StrataFlash Wireless Memory (L18)
Table 29. System Interface Information
Offset
Length
Description
Add.
Hex
Code
Value
1Bh
1
1B:
--17
1.7V
1Ch
1
1C:
--20
2.0V
1Dh
1
1D:
--85
8.5V
1Eh
1
1E:
--95
9.5V
1Fh
1
“n” such that typical single word program time-out = 2
n -sec
1F:
--08
256s
20h
1
“n” such that typical max. buffer write time-out = 2
n -sec
20:
--09
512s
21h
1
“n” such that typical block erase time-out = 2
n m-sec
21:
--0A
1s
22h
1
“n” such that typical full chip erase time-out = 2
n m-sec
22:
--00
NA
23h
1
“n” such that maximum word program time-out = 2
n times typical
23:
--01
512s
24h
1
“n” such that maximum buffer write time-out = 2
n times typical
24:
--01
1024s
25h
1
“n” such that maximum block erase time-out = 2
n times typical
25:
--02
4s
26h
1
“n” such that maximum chip erase time-out = 2
n times typical
26:
--00
NA
VCC logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
VCC logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
VPP [programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
VPP [programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
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