參數(shù)資料
型號： MT28F640J3
廠商： Micron Technology, Inc.
英文描述： 64Mb Flash Memory(64Mb閃速存儲器)
中文描述： 64MB Flash記憶體（64兆閃速存儲器）
文件頁數(shù)： 15/45頁
文件大?。?/td> 317K
代理商： MT28F640J3
15
64Mb, 32Mb SirusFlash Memory
MT28F640J3_2.p65 – Rev. 1, Pub. 12/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
64Mb, 32Mb
SIRUSFLASH MEMORY
PRELIMINARY
NOTE:
1. Future devices may not support the described “ Legacy Lock/Unlock” function. On these devices, bit 3 would have a
value of “ 0.”
PRIMARY VENDOR-SPECIFIC EXTENDED
QUERY TABLE
Table 11 includes information about optional
Flash features and commands and other similar infor-
mation.
Table 11
Primary Vendor-Specific Extended Query
OFFSET
1
P = 31h
(P+0)h
(P+1)h
(P+2)h
(P+3)h
(P+4)h
(P+5)h
(P+6)h
(P+7)h
(P+8)h
DESCRIPTION
(OPTIONAL FLASH FEATURES AND COMMANDS)
Primary extended query table
Unique ASCII string, PRI
A DDRESS
HEX
CODE
50
52
49
31
31
0A
00
00
0
VA LUE
31h
32h
33h
34h
35h
36h
37h
38h
39h
P
R
I
1
1
Major version number, ASCII
Minor version number, ASCII
Optional feature and command support (1 = yes, 0 = no) bits 9–31
are reserved; undefined bits are “0.” If bit 31 is “1,” then another
31-bit field of optional features follows at the end of the bit 30
field.
Bit 0 Chip erase supported = no = 0
Bit 1 Suspend erase supported = yes = 1
Bit 2 Suspend program supported = yes = 1
Bit 3 Legacy lock/unlock supported = yes = 1
1
Bit 4 Queued erase supported = no = 0
Bit 5 Instant Individual block locking supported = no = 0
Bit 6 Protection bits supported = yes = 1
Bit 7 Page mode read supported = yes = 1
Bit 8 Synchronous read supported = no = 0
Supported functions after suspend: read array, status, query
Other supported operations:
Bits 1–7 Reserved; undefined bits are “0”
Bit 0 Program supported after erase suspend = yes = 1
Block status register mask
Bits 2–15 Reserved; undefined bits are “0”
Bit 0 Block lock bit status register active = yes = 1
Bit 1 Block lock down bit status active = no = 0
V
CC
logic supply highest-performance program/erase voltage
Bits 0–3 BCD value in 100mV
Bits 4–7 BCD value in volts
V
PP
optimum program/erase supply voltage
Bits 0–3 BCD value in 100mV
Bits 4–7 Hex value in volts
(P+9)h
3Ah
01
(P+A)h
(P+B)h
3Bh
3Ch
01
00
(P+C)h
3Dh
33
3.3V
(P+D)h
3Eh
00
0.0V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT28F640J3BS-115 ET 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT28F640J3BS-115 ET TR 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤
MT28F640J3BS-115 GMET 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT28F640J3BS-115 GMET TR 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤
MT28F640J3BS-115 MET 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
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