參數(shù)資料
型號(hào)： MPC5534MVM80
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 60/60頁(yè)
文件大?。?/td> 0K
描述： MCU 1MB FLASH 80MHZ 208MAPBGA
標(biāo)準(zhǔn)包裝： 90
系列： MPC55xx Qorivva
核心處理器： e200z6
芯體尺寸： 32-位
速度： 80MHz
連通性： CAN，EBI/EMI，以太網(wǎng)，SCI，SPI
外圍設(shè)備： DMA，POR，PWM，WDT
輸入/輸出數(shù)： 192
程序存儲(chǔ)器容量： 1MB（1M x 8）
程序存儲(chǔ)器類型： 閃存
RAM 容量： 64K x 8
電壓 - 電源 (Vcc/Vdd)： 1.35 V ~ 1.65 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 34x12b
振蕩器型： 外部
工作溫度： -40°C ~ 125°C
封裝/外殼： 208-BGA
包裝： 托盤
其它名稱： Q4437099
T0850514
Electrical Characteristics
MPC5534 Microcontroller Data Sheet, Rev. 6
Freescale Semiconductor
9
3.5
ESD (Electromagnetic Static Discharge) Characteristics
3.6
Voltage Regulator Controller (VRC) and
Power-On Reset (POR) Electrical Specifications
The following table lists the VRC and POR electrical specifications:
Table 5. ESD Ratings 1, 2
1 All ESD testing conforms to CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits.
2 Device failure is defined as: ‘If after exposure to ESD pulses, the device does not meet the device specification requirements,
which includes the complete DC parametric and functional testing at room temperature and hot temperature.
Characteristic
Symbol
Value
Unit
ESD for human body model (HBM)
2000
V
HBM circuit description
R1
1500
C100
pF
ESD for field induced charge model (FDCM)
500 (all pins)
V
750 (corner pins)
Number of pulses per pin:
Positive pulses (HBM)
Negative pulses (HBM)
—
1
—
Interval of pulses
—
1
second
Table 6. VRC and POR Electrical Specifications
Spec
Characteristic
Symbol
Min.
Max.
Units
11.5 V (VDD) POR
1
Negated (ramp up)
Asserted (ramp down)
VPOR15
1.1
1.35
V
23.3 V (VDDSYN) POR
Asserted (ramp up)
Negated (ramp up)
Asserted (ramp down)
Negated (ramp down)
VPOR33
0.0
2.0
0.0
0.30
2.85
0.30
V
3
RESET pin supply
(VDDEH6) POR
Negated (ramp up)
Asserted (ramp down)
VPOR5
2.0
2.85
V
4
VRC33 voltage
Before VRC allows the pass
transistor to start turning on
VTRANS_START
1.0
2.0
V
5
When VRC allows the pass
transistor to completely turn on 3, 4
VTRANS_ON
2.0
2.85
V
6
When the voltage is greater than
the voltage at which the VRC keeps
the 1.5 V supply in regulation 5, 6
VVRC33REG
3.0
—
V
Current can be sourced
–40o C11.0
—
mA
7
by VRCCTL at Tj:
25o CIVRCCTL
7
9.0
—
mA
150o C
7.5
—
mA
8
Voltage differential during power up such that:
VDD33 can lag VDDSYN or VDDEH6 before VDDSYN and VDDEH6 reach the
VPOR33 and VPOR5 minimums respectively.
VDD33_LAG
—1.0
V
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