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參數(shù)資料
| 型號(hào)： | MJE253 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon Power Plastic Transistors(互補(bǔ)型硅功率晶體管) |
| 中文描述： | 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 封裝： | PLASTIC, CASE 77-09, TO-225, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 89K |
| 代理商： | MJE253 |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 11
1
Publication Order Number:
MJE243/D
MJE243 NPN,
MJE253 PNP
Preferred Device
Complementary Silicon
Power Plastic Transistors
These devices are designed for low power audio amplifier and
lowcurrent, highspeed switching applications.
Features
High CollectorEmitter Sustaining Voltage
V
CEO(sus)
= 100 Vdc (Min)
High DC Current Gain @ I
C
= 200 mAdc
h
FE
= 40200
= 40120
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 0.3 Vdc (Max) @ I
C
= 500 mAdc
High Current Gain Bandwidth Product
f
T
= 40 MHz (Min) @ I
C
= 100 mAdc
Annular Construction for Low Leakages
I
CBO
= 100 nAdc (Max) @ Rated V
CB
PbFree Packages are Available*
MAXIMUM RATINGS
I
B
D
Peak
8.0
Base Current
10
Adc
C
Derate above 25 C
0.012
mW/ C
Operating and Storage Junction
T
J
, T
stg
–65 to +150
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
JunctiontoAmbient
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
MJE243
TO225
500 Units/Box
4.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
100 VOLTS, 15 WATTS
http://onsemi.com
MJE243G
TO225
(PbFree)
500 Units/Box
TO225
CASE 77
STYLE 1
21
3
MARKING DIAGRAM
YWW
JE2x3G
Y
WW
JE2x3 = Device Code
x = 4 or 5
G
= PbFree Package
= Year
= Work Week
Preferred
devices are recommended choices for future use
and best overall value.
MJE253
TO225
500 Units/Box
MJE253G
TO225
(PbFree)
500 Units/Box
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PDF描述 |
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| MJE800 | Plastic Darlington Complementary Silicon Power Transistors(互補(bǔ)型達(dá)林頓硅功率晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE253G | 功能描述:兩極晶體管 - BJT 4A 100V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE253G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJE254 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJE270 | 功能描述:兩極晶體管 - BJT 2A 100V Bipolar RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE270G | 功能描述:兩極晶體管 - BJT 2A 100V Bipolar Power NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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