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參數(shù)資料
| 型號： | MJE350 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Medium Power PNP Silicon Transistor(0.5A,300V,20W,塑料中等功率硅PNP晶體管) |
| 中文描述： | 0.5 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-225 |
| 封裝： | PLASTIC, CASE 77-09, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 61K |
| 代理商： | MJE350 |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 13
1
Publication Order Number:
MJE350/D
MJE350
Plastic Medium Power
PNP Silicon Transistor
This device is designed for use in lineoperated applications such as
low power, lineoperated series pass and switching regulators
requiring PNP capability.
Features
High CollectorEmitter Sustaining Voltage
V
CEO(sus)
= 300 Vdc @ I
C
= 1.0 mAdc
Excellent DC Current Gain
h
FE
= 30240 @ I
C
= 50 mAdc
Plastic Thermopad Package
PbFree Package is Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
THERMAL CHARACTERISTICS
CollectorEmitter Voltage
V
V
I
C
P
D
300
Vdc
EmitterBase Voltage
Collector Current Continuous
3.0
500
Vdc
mAdc
Total Power Dissipation @ T
C
= 25 C
20
W
Temperature Range
Characteristic
Symbol
Max
Unit
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Thermal Resistance, JunctiontoCase
JC
6.25
C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
(I
C
= 1.0 mAdc, I
B
= 0)
100
100
30
240
Collector Cutoff Current
CB
E
(V
= 3.0 Vdc, I
= 0)
ON CHARACTERISTICS
DC Current Gain
C
CE
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
MJE350
TO225
500 Units/Box
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS, 20 WATTS
http://onsemi.com
MJE350G
TO225
(PbFree)
500 Units/Box
TO225
CASE 77
STYLE 1
21
3
MARKING DIAGRAM
YWW
J350G
Y
WW
J350
G
= Year
= Work Week
= Device Code
= PbFree Package
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE350 | 制造商:ON Semiconductor 功能描述:BIP-300V 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, PNP, -300V |
| MJE350 | 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-126 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP TO-126 |
| MJE350G | 功能描述:兩極晶體管 - BJT 0.5A 300V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE350STU | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE370 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SILICON COMPLEMENTARY POWER TRANSISTORS |
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