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參數(shù)資料
| 型號(hào)： | MJE350 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Medium Power PNP Silicon Transistor(0.5A,300V,20W,塑料中等功率硅PNP晶體管) |
| 中文描述： | 0.5 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-225 |
| 封裝： | PLASTIC, CASE 77-09, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | MJE350 |
MJE350
http://onsemi.com
2
V
θ
°
I
C
, COLLECTOR CURRENT (mA)
h
200
7.0
20
5.0
50
30
10
10
50
100
30
25
°
C
T
J
= 150
°
C
55
°
C
Figure 1. DC Current Gain
100
20
70
200
500
300
70
V
CE
= 2.0 V
V
CC
= 10 V
Figure 2. “On” Voltages
1.0
I
C
, COLLECTOR CURRENT (mA)
0.8
0.2
0
T
J
= 25
°
C
V
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 10 V
0.6
0.4
V
CE(sat)
7.0
20
5.0
10
50
100
30
200
500
300
70
I
C
/I
B
= 10
I
C
/I
B
= 5.0
1000
700
500
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
70
50
300
10
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25
°
C
SECOND BREAKDOWN LIMITED
Figure 3. ActiveRegion Safe Operating Area
1.0ms
dc
200
100
50
20
T
J
= 150
°
C
I
100
300
30
100 s
400
30
70
200
20
500 s
+1.2
I
C
, COLLECTOR CURRENT (mA)
70
Figure 4. Temperature Coefficients
50
30
10
5.0
500
7.0
20
+0.8
+0.4
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
100
200 300
*APPLIES FOR I
C
/I
B
< h
FE/4
*
VC
for V
CE(sat)
VB
for V
BE
+100
°
C to +150
°
C
+25
°
C to +100
°
C
55
°
C to +25
°
C
+25
°
C to +150
°
C
55
°
C to +25
°
C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150 C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
20
T
C
, CASE TEMPERATURE (
°
C)
Figure 5. Power Derating
100
80
40
0
160
20
60
16
12
8.0
4.0
0
120
140
P
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE350 | 制造商:ON Semiconductor 功能描述:BIP-300V 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, PNP, -300V |
| MJE350 | 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-126 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP TO-126 |
| MJE350G | 功能描述:兩極晶體管 - BJT 0.5A 300V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE350STU | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE370 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SILICON COMPLEMENTARY POWER TRANSISTORS |
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