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Analog Integrated Circuit Device Data
14
Freescale Semiconductor
33797
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 6. Dynamic Electrical Characteristics
Characteristics noted under conditions 4.75 V VDD 5.25 V; 7.0 V VVFIRE_XX 35 V; VVDIAG_X = VVFIRE_XX;
FEN 1 = FEN 2 = VDD; RR_LIMIT_X = 10 k ±1%, RR_DIAG = 10 k ±1%, -40 C TA +85 C, GND = 0, unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
SERIAL INTERFACE
CLK Cycle Time (1/FCLK)
(18)tCYC
200
–
ns
VCLK > VDD x 70%
tHI
73
–
ns
VCLK < VDD x 20%
tLO
73
–
ns
VCLK = 20% VDD to 70% VDD, CLOAD = 100 pF
tRISE
–
20
ns
VCLK = 70% VDD to 20% VDD, CLOAD = 100 pF
tFALL
–
20
ns
VDO = 20% VDD to 70% VDD, CLOAD = 100 pF
tR
–
20
ns
VDO = 70% VDD to 20% VDD, CLOAD = 100 pF
tF
–
20
ns
Chip Select Setup Time
(19)CSB
Before CLK
tLEAD
73
–
ns
Chip Select Hold Time
(19)CLK
Before CSB
tLAG
73
–
ns
D1 Valid Before CLK
tSU
30
–
ns
D1 Hold Time After CLK
tH
30
–
ns
Data Out Access Time
(19)CSB
to D0 Valid
tA
–
73
ns
Data Out Disable Time
(19)CSB
to D0 HI-Z
tDIS
–
73
ns
CLK
to D0 Valid, CLOAD = 100 pF
tV
–
75
ns
D0 held After CLK
tHO
0.0
–
ns
Diagnostic Delay Time (Between Two Successive Commands)
tDIAG
2.5
–
s
Notes
18
Determined by Design
19
Guaranteed by Characterization