STATIC ELECTRICAL CHARACTERISTICS VFIRE1A / V" />
參數(shù)資料
型號(hào)： MCZ33797EKR2
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 36/36頁(yè)
文件大?。?/td> 0K
描述： IC SQUIB DRIVER 2CHAN 32-SOIC
標(biāo)準(zhǔn)包裝： 1,000
系列： *
應(yīng)用： *
接口： *
電源電壓： *
封裝/外殼： 32-SOIC（0.295"，7.50mm 寬）
供應(yīng)商設(shè)備封裝： 32-SOIC
包裝： 帶卷 (TR)
安裝類型： 表面貼裝
Analog Integrated Circuit Device Data
Freescale Semiconductor
9
33797
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
VFIRE1A / VFIRE2A Current During High Side Safing Sensor Diagnostics
(Command $CO)
Per VFIREXA pin, with High Side Safing Sensor Diagnostic active
IRRE
260
350
415
A
VFIRE1B / VFIRE2B Current During High Side Safing Sensor Diagnostics
(Command $CO)
Per VFIREXB pin, with High Side Safing Sensor Diagnostic active
IRRE
22
32
55
A
VFIRE1B / VFIRE2B Current During VFIRE Diagnostics (Command $C5)
Either VFIRE!B or VFIRE2B Diagnostic active
IRRE
0.3
2.0
3.8
mA
VFIRE Quiescent Current - Total
All VFIRE pins measured together, with Diagnostics Off
IQVFIRETOTAL
90
135
180
A
Maximum Allowable External Capacitance to Ground (9)
Per Squib pin SQB_LO and SQB_HI
CSMAX
–
0.12
F
Maximum Allowable External Resistance to Ground During Firing (9)
VFIRE_RTN pin to Ground
RSMAX
–
0.15
Individual FET Driver Thermal Shutdown (9), (10)
TSD
160
–
190
C
FET Driver Thermal Shutdown Re-enable Threshold After Drive Cool down
TREN
90
–
110
C
FET DRIVERS HIGH AND LOW SIDE DRIVER TRANSISTOR STATUS/DIAGNOSTICS ($82, $83 COMMANDS)
Voltage Transistor Test Threshold for High Side Driver Transistor
VTRANTST1
5.5
6.0
6.5
V
High Side Driver Current Limit During High Side Driver Transistor
Diagnostics
15 V
VVFIRE_XX 35 V
ITRANTST1
2.0
10
50
mA
Voltage Transistor Test Threshold for Low Side Driver Transistor
VTRANTST2
1.0
1.4
2.0
V
Low Side Driver Current Limit During Low Side Driver Transistor
Diagnostics
15 V
VVFIRE_XX 35 V
ITRANTST2
2.0
10
50
mA
FEN INPUT PIN (FEN_1 AND FEN_2)
Internal Current Pull-down
IFEN
-25
-40
-50
A
Logic Low Level
VFEN(LO)
0.0
2.5
0.35 x VDD
V
Fire Enable Pin Logic High Level
VFEN(HI)
0.65 x VDD
2.5
1.0 x VDD
V
Notes
9
Guaranteed by design.
10
With a nominal squib load, the FET squib driver will not enter thermal shutdown until the driver has been active for a minimum of 2.1 ms.
The individual squib driver thermal shutdown will not affect other squib driver firing ON times. With a shorted squib load, the FET squib
driver will not enter thermal shutdown until the driver has been active for a minimum of 2.1 ms. When the thermal shutdown limit is
exceeded, the FET driver will turn OFF and the thermal status bit will be set to 1. The FET squib driver can be activated through the
arm/fire command when the TEMPRENABLE (MIN) is reached (thermal shutdown status “0”). Nominal squib load: 2.15 ±0.15 .
Shorted squib load: 0.1
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions 4.75 V VDD 5.25 V; 7.0 V VVFIRE_XX 35 V; VVDIAG_X = VVFIRE_XX;
FEN 1 = FEN 2 = VDD; RR_LIMIT_X = 10 k ±1%, RR_DIAG = 10 k ±1%, -40 C TA +85 C, GND = 0, unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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