參數(shù)資料
型號： MBM29DL163TD12PBT
廠商： FUJITSU LTD
元件分類： PROM
英文描述： 1M X 16 FLASH 3V PROM, 120 ns, PBGA48
封裝： PLASTIC, FBGA-48
文件頁數(shù)： 47/76頁
文件大小： 1146K
代理商： MBM29DL163TD12PBT
MBM29DL16XTD/BD-70/90/12
51
Notes: 1. Address bits A11 to A19 = X = “H” or “L” for all address commands except or Program Address (PA), Sector
Address (SA), and Bank Address (BA).
2. Bus operations are defined in Tables 3 and 4.
3. RA =
Address of the memory location to be read
PA =
Address of the memory location to be programmed
Addresses are latched on the falling edge of the write pulse.
SA =
Address of the sector to be erased. The combination of A19, A18, A17, A16, A15, A14, A13, and A12 will
uniquely select any sector.
BA =
Bank Address (A15 to A19)
4. RD =
Data read from location RA during read operation.
PD =
Data to be programmed at location PA. Data is latched on the falling edge of write pulse.
5. SPA = Sector group address to be protected. Set sector group address (SGA) and (A6, A1, A0) = (0, 1, 0).
SD =
Sector group protection verify data. Output 01H at protected sector group addresses and output
00H at unprotected sector group addresses.
6. HRA = Address of the Hi-ROM area
29DL16XTD (Top Boot Type)
Word Mode: 0F8000H to 0FFFFFH
Byte Mode: 1F0000H to 1FFFFFH
29DL16XBD (Bottom Boot Type) Word Mode: 000000H to 007FFFH
Byte Mode: 000000H to 00FFFFH
7. HRBA =Bank Address of the Hi-ROM area
29DL16XTD (Top Boot Type)
:A15 = A16= A17 = A18 = A19 = 1
29DL16XBD (Bottom Boot Type) :A15 = A16= A17 = A18 = A19 = 0
8. The system should generate the following address patterns:
Word Mode: 555H or 2AAH to addresses A0 to A10
Byte Mode: AAAH or 555H to addresses A–1 and A0 to A10
9. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
*1:This command is valid while Fast Mode.
*2:This command is valid while RESET = VID.
*3:The valid addresses are A6 to A0.
*4:This command is valid while Hi-ROM mode.
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