*1 : TA = + 25 °C, V<" />
參數(shù)資料
型號: MB95F118JWPMC-GE1
廠商: Fujitsu Semiconductor America Inc
文件頁數(shù): 58/76頁
文件大?。?/td> 0K
描述: IC MCU 60K FLASH 2KB RAM 52LQFP
標(biāo)準(zhǔn)包裝: 1
系列: F²MC MB95110M
核心處理器: F²MC-8FX
芯體尺寸: 8-位
速度: 16MHz
連通性: I²C,LIN,SIO,UART/USART
外圍設(shè)備: LVD,POR,PWM,WDT
輸入/輸出數(shù): 39
程序存儲器容量: 60KB(60K x 8)
程序存儲器類型: 閃存
RAM 容量: 2K x 8
電壓 - 電源 (Vcc/Vdd): 2.4 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x8/10b
振蕩器型: 外部
工作溫度: -40°C ~ 85°C
封裝/外殼: 52-LQFP
包裝: 托盤
產(chǎn)品目錄頁面: 722 (CN2011-ZH PDF)
其它名稱: 865-1071
MB95110M Series
61
6.
Flash Memory Program/Erase Characteristics
*1 : TA
= + 25 °C, VCC = 5.0 V, 10000 cycles
*2 : TA
= + 85 °C, VCC = 4.5 V, 10000 cycles
*3 : This value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at
+85 °C) .
Parameter
Condi-
tions
Value
Unit
Remarks
Min
Typ
Max
Sector erase time
(4 Kbytes sector)
0.2*1
0.5*2
s
Excludes 00H programming prior
erasure.
Sector erase time
(16 Kbytes sector)
0.5*1
7.5*2
s
Excludes 00H programming prior
erasure.
Byte programming time
32
3600
s
Excludes system-level overhead.
Program/erase cycle
10000
cycle
Power supply voltage at
program/erase
4.5
5.5
V
Flash memory data
retention time
20*3
year
Average TA
= +85 °C
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