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參數(shù)資料
| 型號： | LTC4110EUHF#TR |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 電源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PQCC38 |
| 封裝： | 5 X 7 MM, 0.75 MM HEIGHT, PLASTIC, MO-220WHKD, QFN-38 |
| 文件頁數(shù)： | 37/52頁 |
| 文件大?。?/td> | 450K |
| 代理商： | LTC4110EUHF#TR |
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LTC4110
42
4110fb
Example:
VDCIN = 12V, fOSC = 300kHz, QG1 = QG2 = 15nC,
IQ = 3mA
PD = 144mW
SNUBBER DESIGN
The values given in the applications schematics have been
found to work quite well for this 12V-1A application. Care
should be taken in selecting other values for your applica-
tion since efciency may be impacted by a poor choice.
For a detailed look at snubber design, Application Note
19 is very helpful.
COMPONENT SELECTION
Current Sense Resistors
The LTC4110 uses up to three sense resistors—one of
them optional. In general, current sense resistors should
have a low temperature coefcient and sufcient power
dissipation capability to avoid self-heating. Tolerance
depends on system accuracy requirements.
RSNS(FET): The power rating of RSNS(FET) is dened by the
highest value between ICHG or ICAL and the transformer
turns ratio. Use one the following equations to calculate
IRSNS(FET) depending on which value, ICHG or ICAL which-
ever is higher.
IR(SNSFETCHG) =
ICHG
1+
VBAT
N VDCIN
N VBAT
E2 VDCIN
+ 1
IR(SNSFETCAL) =
ICAL
1+
VBAT
N VDCIN
N E2 VBAT
VDCIN
+ 1
Plug in the higher value of the above two results as
IR(SNSFET) and solve for power:
PR(SNSFET) = IR(SNSFET)2 RSNS(FET)
RCL: RCL power rating is a function of the maximum forward
current the system load draws. See Figure 11.
PR(CL) = IMAX2 RCL
Find a sense resistor who’s power rating is greater than
PR(CL)
RSNS(BAT): RSNS(BAT) power rating is a function of the
highest current value between ICHG or ICAL with which
the battery will work. Plug in the higher of the two into
IBAT(MAX) and solve:
PR(SNSBAT) = IMAX2 RSNS(BAT)
Use a sense resistor with a power rating greater than
PSNS(BAT)
FLYBACK MOSFET SELECTION
The LTC4110 uses two low side N-channel switching
MOSFETs in its yback converter. These MOSFETs have
dual roles. An any given time, only one MOSFET is the
primary switch while the other acts as a synchronous recti-
er on the secondary to improve efciency. The individual
MOSFETs’ roles depend on whether the battery is being
charged or calibrated. Each MOSFET specication must
account for both roles.
The MOSFET voltage ratings in a yback design must deal
with other factors beyond VIN. During switch “on” time, a
current is established in the primary leakage inductance
(LL) equal to peak primary current (IPRI). When the switch
turns off, the energy stored in LL, (Energy = IPRI2 LL/2)
causes the switch voltage to y up, starting from the input
voltage on up to the breakdown of the MOSFET if the volt-
age is not clamped. Thus, the snubber design is critical
in dealing with this voltage spike and can inuence the
MOSFET voltage selection value. From a MOSFET point
of view, the minimum voltage must be greater than the
snubber clamp voltage VSNUB. If VSNUB itself is too low,
zener clamp dissipation rises rapidly thus encouraging
higher MOSFET voltages. The maximum DC voltage that
the N-channel MOSFETs sees is:
VV
V
N
CHG FET
DCIN
BAT
() =+
VV
N V
CAL FET
BAT
DCIN
() =+
APPLICATIONS INFORMATION
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