參數(shù)資料
型號: IRGP30B120KD-E
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode(帶超快軟恢復(fù)的絕緣柵雙極型晶體管,應(yīng)用于電機(jī)控制)
中文描述: 絕緣柵雙極晶體管的超快軟恢復(fù)二極管(帶超快軟恢復(fù)的絕緣柵雙極型晶體管,應(yīng)用于電機(jī)控制)
文件頁數(shù): 7/12頁
文件大小: 132K
代理商: IRGP30B120KD-E
IRGP30B120KD-E
www.irf.com
7
Fig.20 - Typical Diode Q
RR
V
CC
=600V; V
GE
=15V; Tj=125°C
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
0
500
1000
1500
dI
F
/ dt (A/μs)
Q
R
51
22
10
5
50A
40A
30A
25A
20A
Fig.18 - Typical Diode I
RR
vs Rg
Tj=125°C; I
F
=25A
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
Rg (ohms)
25
30
35
40
45
50
55
I
R
Fig.17 - Typical Diode I
RR
vs I
F
Tj=125°C
0
5
10
15
20
25
30
35
40
45
0
10
20
40
50
60
I
F
(A)
I
R
Rg=5
Rg=10
Rg=22
Rg=51
Fig.19 - Typical Diode I
RR
vs dI
F
/dt
V
CC
=600V; V
GE
=15V
I
F
=25A; Tj=125°C
0
5
10
15
20
25
30
35
40
45
0
500
dI
F
/ dt (A/μs)
1000
1500
I
R
Rg=22
Rg=51
Rg=10
Rg=5
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