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參數(shù)資料
| 型號(hào)： | IRGPC20F |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）（快速絕緣柵型雙極型晶體管） |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 105K |
| 代理商： | IRGPC20F |
IRGPC20F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
—
—
—
—
Typ.
—
0.24
—
6 (0.21)
Max.
2.1
—
40
—
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
°C/W
g (oz)
Features
Switching-loss rating includes all "tail" losses
Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency
curve
V
CES
= 600V
V
CE(sat)
≤
2.8V
@V
GE
= 15V, I
C
= 9.0A
E
C
G
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
16
9.0
64
64
±20
5.0
60
24
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
mJ
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Thermal Resistance
T
O-247AC
PD - 9.1022
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGPC20M | Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管) |
| IRGPF20F | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| IRHF57230SE | RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) |
| IRHM7460SE | TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A) |
| IRHY7130CM | HEXFET Transistor(HEXFET 晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGPC20K | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPC20KD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPC20M | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPC20MD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A) |
| IRGPC20U | 制造商:Int'L Rectifier 功能描述:Trans IGBT Chip N-CH 600V 13A 3-Pin(3+Tab) TO-247AC |
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