參數(shù)資料
型號: IRGPF20F
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管)
中文描述: 絕緣門雙極晶體管(IGBTs)(快速絕緣柵型雙極型晶體管)
文件頁數(shù): 1/6頁
文件大?。?/td> 108K
代理商: IRGPF20F
C-249
IRGPF20F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
0.24
6 (0.21)
Max.
2.1
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
°C/W
g (oz)
Features
Switching-loss rating includes all "tail" losses
Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
V
CES
= 900V
V
CE(sat)
4.3V
@V
GE
= 15V, I
C
= 5.3A
E
C
G
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
900
9.0
5.3
18
18
±20
5.0
60
24
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
mJ
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Thermal Resistance
TO-247AC
PD - 9.1025
Revision 0
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