參數(shù)資料
型號: IRGP20B120UD
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode(帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管)
中文描述: 絕緣柵雙極晶體管的超快軟恢復(fù)二極管(帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管)
文件頁數(shù): 5/12頁
文件大?。?/td> 127K
代理商: IRGP20B120UD
IRGP20B120UD-E
www.irf.com
5
Fig.10 - Typical V
CE
vs V
GE
Tj= 25°C
0
2
4
6
8
10
12
14
16
18
20
6
8
10
12
V
GE
(V)
14
16
18
20
V
C
I
CE
=10A
I
CE
=20A
I
CE
=40A
Fig.9 - Typical V
CE
vs V
GE
Tj= -40°C
0
2
4
6
8
10
12
14
16
18
20
6
8
10
12
V
GE
(V)
14
16
18
20
V
C
I
CE
=10A
I
CE
=20A
I
CE
=40A
Fig.12 - Typ. Transfer Characteristics
V
CE
=20V; tp=20μs
250
Tj=25°C
Tj=125°C
0
25
50
75
100
125
150
175
200
225
0
4
8
V
GE
(V)
12
16
20
I
C
Tj=25°C
Tj=125°C
Fig.11 - Typical V
CE
vs V
GE
Tj= 125°C
0
2
4
6
8
10
12
14
16
18
20
6
8
10
12
V
GE
(V)
14
16
18
20
V
C
I
CE
=10A
I
CE
=20A
I
CE
=40A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGP20B120UD-E 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGP20B120UD-EP 功能描述:IGBT 晶體管 1200V ULTRAFAST 5-40 KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGP20B120UD-EP 制造商:International Rectifier 功能描述:; MOUNTING TYPE:THROUGH HOLE; PACKAGE/CA
IRGP20B120U-E 制造商:International Rectifier 功能描述:SINGLE IGBT, 1.2KV, 40A, Transistor Type:IGBT, DC Collector Current:40A, Collect
IRGP20B120U-EP 功能描述:IGBT 晶體管 1200V UltraFast 5-40kHz Single IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube