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參數(shù)資料
| 型號： | IRGP20B120UD |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode(帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管) |
| 中文描述： | 絕緣柵雙極晶體管的超快軟恢復(fù)二極管（帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管） |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 127K |
| 代理商： | IRGP20B120UD |
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast Non Punch Through (NPT)
Technology
Low Diode V
F
(1.67V Typical @ 20A & 25°C)
10
μ
s Short Circuit Capability
Square RBSOA
UltraSoft Diode Recovery Characteristics
Positive V
CE(on)
Temperature Coefficient
Extended Lead TO-247AD Package
Benefits
Benchmark Efficiency Above 20KHz
Optimized for Welding, UPS, and Induction Heating
Applications
Rugged with UltraFast Performance
Low EMI
Significantly Less Snubber Required
Excellent Current Sharing in Parallel Operation
Longer Leads for Easier Mounting
Absolute Maximum Ratings
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Transient Thermal Impedance Junction-to-Case
(Fig.24)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.42
0.83
–––
40
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
W
t
Z
θ
JC
www.irf.com
°C/W
g (oz)
12/14/99
E
G
C
IRGP20B120UD-E
UltraFast CoPack IGBT
PD- 93817
TO-247AD
N-channel
1
V
CES
= 1200V
V
CE(on) typ.
= 3.05V
V
GE
= 15V, I
C
= 20A, 25°C
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
(Fig.1)
Continuous Collector Current
(Fig.1)
Pulsed Collector Current
(Fig.3, Fig. CT.5)
Clamped Inductive Load Current
(Fig.4, Fig. CT.2)
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
(Fig.2)
Maximum Power Dissipation
(Fig.2)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw.
Max.
1200
40
20
120
120
20
120
± 20
300
120
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
-55 to + 150
300, (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
°C
W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGP20B120UD-E | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGP20B120UD-EP | 功能描述:IGBT 晶體管 1200V ULTRAFAST 5-40 KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGP20B120UD-EP | 制造商:International Rectifier 功能描述:; MOUNTING TYPE:THROUGH HOLE; PACKAGE/CA |
| IRGP20B120U-E | 制造商:International Rectifier 功能描述:SINGLE IGBT, 1.2KV, 40A, Transistor Type:IGBT, DC Collector Current:40A, Collect |
| IRGP20B120U-EP | 功能描述:IGBT 晶體管 1200V UltraFast 5-40kHz Single IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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