參數(shù)資料
型號: IRGP20B120UD
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode(帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管)
中文描述: 絕緣柵雙極晶體管的超快軟恢復(fù)二極管(帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管)
文件頁數(shù): 4/12頁
文件大?。?/td> 127K
代理商: IRGP20B120UD
IRGP20B120UD-E
4
www.irf.com
Fig.6 - Typical IGBT Output
Characteristics
Tj=25°C; tp=300μs
0
5
10
15
20
25
30
35
40
45
50
55
60
0
1
2
3
4
5
6
V
CE
(V)
I
C
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8V
Fig.7 - Typical IGBT Output
Characteristics
Tj=125°C; tp=300μs
0
5
10
15
20
25
30
35
40
45
50
55
60
0
1
2
3
4
5
6
V
CE
(V)
I
C
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8V
Fig.5 - Typical IGBT Output
Characteristics
Tj= -40°C; tp=300μs
0
5
10
15
20
25
30
35
40
45
50
55
60
0
1
2
3
4
5
6
V
CE
(V)
I
C
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8V
Fig.8 - Typical Diode Forward
Characteristic
tp=300μs
0
5
10
15
20
25
30
35
40
45
50
55
60
0
1
2
3
4
V
F
(V)
I
F
- 40°C
25°C
125°C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGP20B120UD-E 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGP20B120UD-EP 功能描述:IGBT 晶體管 1200V ULTRAFAST 5-40 KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGP20B120UD-EP 制造商:International Rectifier 功能描述:; MOUNTING TYPE:THROUGH HOLE; PACKAGE/CA
IRGP20B120U-E 制造商:International Rectifier 功能描述:SINGLE IGBT, 1.2KV, 40A, Transistor Type:IGBT, DC Collector Current:40A, Collect
IRGP20B120U-EP 功能描述:IGBT 晶體管 1200V UltraFast 5-40kHz Single IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube