參數(shù)資料
型號: IRG4PF50W
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistors (IGBTs)(絕緣柵型雙極型晶體管)
中文描述: 絕緣門雙極晶體管(IGBTs)(絕緣柵型雙極型晶體管)
文件頁數(shù): 7/8頁
文件大小: 138K
代理商: IRG4PF50W
IRG4PF50W
www.irf.com
7
720V
4
X
I
C
@
25°C
D.U.T.
50V
L
V *
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
1000V
Fig. 13a
-
Clamped Inductive
Load Test Circuit
Fig. 13b
-
Pulsed Collector
Current Test Circuit
480μF
960V
0 - 720V
R
L
=
t=5μs
d(on)
t
t
f
t
r
90%
t
d(off)
10%
90%
10%
5%
V
C
I
C
E
on
E
off
E = (E +E )
Fig. 14b
-
Switching Loss
Waveforms
50V
Driver*
1000V
D.U.T.
I
C
C
V
L
Fig. 14a
-
Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 720V
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