參數(shù)資料
型號(hào)： IRG4PF50W
廠商： International Rectifier
英文描述： Insulated Gate Bipolar Transistors (IGBTs)(絕緣柵型雙極型晶體管)
中文描述： 絕緣門雙極晶體管（IGBTs）（絕緣柵型雙極型晶體管）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 138K
代理商： IRG4PF50W
IRG4PF50W
2
www.irf.com
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
–––
160
–––
19
–––
53
–––
29
–––
26
–––
110
–––
150
–––
0.19
–––
1.06
–––
1.25
–––
28
–––
26
–––
280
–––
90
–––
3.45
–––
13
––– 3300 –––
–––
200
–––
45
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
240
29
80
–––
–––
170
220
–––
–––
1.7
–––
–––
–––
–––
–––
–––
I
C
= 28A
V
CC
= 400V
V
GE
= 15V
nC
See Fig. 8
T
J
= 25°C
I
C
= 28A, V
CC
= 720V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
See Fig. 10, 11, 13, 14
mJ
T
J
= 150°C,
I
C
= 28A, V
CC
= 720V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
See Fig. 13, 14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
mJ
nH
–––
–––
pF
See Fig. 7
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
900
–––
18
–––
––– 0.295 –––
–––
2.25
–––
2.74
–––
2.12
3.0
–––
–––
-13
26
39
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
(BR)CES
V
(BR)ECS
–––
–––
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 3.5mA
I
C
= 28A V
GE
= 15V
I
C
= 60A
I
C
= 28A , T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 1.0mA
S
V
CE
≥
15V, I
C
= 28A
V
GE
= 0V, V
CE
= 900V
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
mA
V
GE
= 0V, V
CE
= 900V, T
J
= 150°C
nA
V
GE
= ±20V
V/°C
2.7
–––
–––
6.0
–––
–––
500
2.0
5.0
±100
V
CE(ON)
Collector-to-Emitter Saturation Voltage
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
Gate Threshold Voltage
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
μA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L =
10μH, R
G
= 5.0
,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
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