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參數(shù)資料
| 型號： | IRG4PF50W |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）（絕緣柵型雙極型晶體管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 138K |
| 代理商： | IRG4PF50W |
IRG4PF50W
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91710
E
C
G
n-channel
Features
Optimized for use in Welding and Switch-Mode
Power Supply applications
Industry benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest technology IGBT design offers tighter
parameter distribution coupled with exceptional
reliability
Benefits
Lower switching losses allow more cost-effective
operation and hence efficient replacement of larger-
die MOSFETs up to 100kHz
Of particular benefit in single-ended converters and
Power Supplies 150W and higher
Reduction in critical Eoff parameter due to minimal
minority-carrier recombination coupled with low on-
state losses allow maximum flexibility in device
application
Absolute Maximum Ratings
V
CES
= 900V
V
CE(on) typ.
= 2.25V
@V
GE
= 15V, I
C
= 28A
Parameter
Max.
900
51
28
204
204
± 20
186
200
78
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
V
mJ
-55 to + 150
300 (0.063 in. (1.6mm from case )
°C
W
4/15/98
www.irf.com
1
Parameter
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.64
–––
40
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
Thermal Resistance
TO-247AC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4PF50WD | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PF50WD-201P | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IRG4PF50WDPBF | 功能描述:IGBT 晶體管 900V Warp 20-100kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4PF50WPBF | 功能描述:IGBT 晶體管 900V Warp 20-100kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4PG40FD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
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