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參數(shù)資料
| 型號(hào)： | IRFB18N50K |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）最大值\u003d 0.26ohm，身份證\u003d 27A條） |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | IRFB18N50K |
IRFB18N50K
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
8
www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR
’
s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
03/01
LEA D A SSIGN MEN TS
1 - GATE
2 - D RA IN
3 - S OU RC E
4 - D RA IN
- B -
1.32 (.052)
1.22 (.048)
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X
0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X
1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
N OTE S:
1 D IME NS IONING & TOLE R ANC IN G P ER ANS I Y14.5M, 1982. 3 O UTLINE C ON FOR MS TO JED EC OU TLIN E TO-220A B.
2 C ON TR OLLIN G D IME NS ION : INC H 4 H EATS IN K & LEA D ME ASUR E MENTS D O NOT IN CLU DE BU R RS .
TO-220AB Part Marking Information
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE : THIS IS AN IRF1010
W ITH ASSEMBLY
LOT CODE 9B1M
ASSEMBLY
LOT CODE
DATE CODE
(YYW W )
YY = YEAR
W W = W EEK
9246
IRF1010
9B 1M
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFB18N50KPBF | 功能描述:MOSFET N-Chan 500V 17 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB20N50K | 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB20N50KPBF | 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFB20N50KPBF | 制造商:Vishay Siliconix 功能描述:N CH MOSFET, 500V, 20A, TO-220AB |
| IRFB23N15 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A) |
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