參數(shù)資料
型號： IRFB18N50K
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）最大值\u003d 0.26ohm，身份證\u003d 27A條）
文件頁數(shù)： 2/8頁
文件大?。?/td> 83K
代理商： IRFB18N50K
IRFB18N50K
2
www.irf.com
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
g
fs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
C
oss
eff.
Effective Output Capacitance
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Parameter
Min. Typ. Max. Units
500
–––
–––
0.59
–––
0.26 0.29
3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 10A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= 30V
V
GS
= -30V
Drain-to-Source Breakdown Voltage
–––
–––
V
V/
°
C
V
μA
μA
5.0
50
250
100
-100
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
Static @ T
J
= 25
°
C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25
°
C, L = 2.5mH, R
G
= 25
,
I
AS
= 17A,
I
SD
≤
17A, di/dt
≤
149A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150
°
C
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
Min. Typ. Max. Units
6.4
–––
–––
–––
–––
–––
–––
–––
–––
22
–––
60
–––
45
–––
30
–––
2830
–––
–––
330
–––
38
–––
3310
–––
–––
93
–––
155
Conditions
V
DS
= 50V, I
D
= 10A
I
D
= 17A
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 250V
I
D
= 17A
R
G
= 7.5
V
GS
= 10V,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V,
= 1.0MHz
V
GS
= 0V, V
DS
= 400V,
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 400V
–––
120
34
54
–––
–––
–––
–––
S
nC
–––
–––
pF
–––
–––
ns
Symbol
I
S
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 17A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 17A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
520
5.3
1.5
780
8.0
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
S
D
G
Diode Characteristics
17
68
A
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