- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385443 > IRFBA1404P (International Rectifier) Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A) PDF資料下載
參數(shù)資料
| 型號(hào)： | IRFBA1404P |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 40V的，的Rds（on）\u003d 3.7mohm，身份證\u003d 206A） |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 115K |
| 代理商： | IRFBA1404P |
IRFBA1404P
HEXFET
Power MOSFET
PD - 93806
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
Power MOSFETs utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175
o
C junction operating
temperature, fast switching speed and improved ruggedness in
single and repetitive avalanche. The Super-220
TM
is a package that
has been designed to have the same mechanical outline and pinout
as the industry standard TO-220 but can house a considerably
larger silicon die. The result is significantly increased current
handling capability over both the TO-220 and the much larger TO-
247 package. The combination of extremely low on-resistance
silicon and the Super-220
TM
package makes it ideal to reduce the
component count in multiparalled TO-220 applications, reduce
system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has been designed
to meet automotive, Q101, qualification standard.
These benefits make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
Absolute Maximum Ratings
Description
S
D
G
10/24/00
www.irf.com
1
Parameter
Max.
206
145
650
300
2.0
± 20
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
See Fig.12a, 12b, 15, 16
30
5.0
-40 to + 175
-55 to + 175
300 (1.6mm from case )
20
N
°C
l
Anti-lock Braking Systems (ABS)
Electric Power Steering (EPS)
Electric Braking
Radiator Fan Control
Benefits
l
Advanced Process Technology
Ultra Low On-Resistance
Increase Current Handling Capability
175°C Operating Temperature
Fast Switching
Dynamic dv/dt Rating
Repetitive Avalanche Allowed up to Tjmax
l
l
l
V
DSS
= 40V
R
DS(on)
= 3.7m
I
D
= 206A
Super
-
220
Typical Applications
l
l
l
l
l
l
AUTOMOTIVE MOSFET
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFBA1405 | Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A) |
| IRFBA1405P | Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A) |
| IRFBL17N50L | HEXFET Power MOSFET(SMPS)(HEXFET 功率MOS場(chǎng)效應(yīng)管(用于開關(guān)模式電源)) |
| IRFBL18N50K | HEXFET Power MOSFET(SMPS)(HEXFET 功率MOS場(chǎng)效應(yīng)管(用于開關(guān)模式電源)) |
| IRFE220 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFBA1404PPBF | 功能描述:MOSFET MOSFT 40V 206A 3.7mOhm 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBA1405 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=55V, Rds(on)=5.0mohm, Id=174A) |
| IRFBA1405P | 功能描述:MOSFET N-CH 55V 174A SUPER-220 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFBA1405PPBF | 功能描述:MOSFET MOSFT 55V 174A 5mOhm 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFBA1405PPBF-ND | 制造商: 功能描述: 制造商:undefined 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。