參數(shù)資料
型號: IRFB18N50K
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 500V及的Rds(on)最大值\u003d 0.26ohm,身份證\u003d 27A條)
文件頁數(shù): 4/8頁
文件大?。?/td> 83K
代理商: IRFB18N50K
IRFB18N50K
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
30
Q , Total Gate Charge (nC)
60
90
120
150
0
4
8
12
16
20
V
G
I =
17A
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
0.1
1
10
100
0.2
0.5
0.8
1.1
1.4
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 150 C
T = 25 C
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
100000
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0.1
1
10
100
1000
10
100
1000
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
I
10us
100us
1ms
10ms
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